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An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances

This paper details the theory and implementation of an inverse-class-F (class-F -1 ) CMOS oscillator. It features: 1) a single-ended PMOS-NMOS-complementary architecture to generate the differential outputs and 2) a transformer-based two-port resonator to boost the drain-to-gate voltage gain (A V )...

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Main Authors: Lim, Chee Cheow, Ramiah, Harikrishnan, Yin, Jun, Mak, Pui-In, Martins, Rui Paulo
Format: Article
Published: Institute of Electrical and Electronics Engineers 2018
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.um.edu.my/21460/
https://doi.org/10.1109/JSSC.2018.2875099
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spelling my.um.eprints.214602019-06-11T04:23:48Z http://eprints.um.edu.my/21460/ An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances Lim, Chee Cheow Ramiah, Harikrishnan Yin, Jun Mak, Pui-In Martins, Rui Paulo TK Electrical engineering. Electronics Nuclear engineering This paper details the theory and implementation of an inverse-class-F (class-F -1 ) CMOS oscillator. It features: 1) a single-ended PMOS-NMOS-complementary architecture to generate the differential outputs and 2) a transformer-based two-port resonator to boost the drain-to-gate voltage gain (A V ) while creating two intrinsic-high-Q impedance peaks at the fundamental (f LO ) and double (2f LO ) oscillation frequencies. The enlarged second harmonic voltage extends the flat span in which the impulse sensitivity function (ISF) is minimum, and the amplified gate voltage swing reduces the current commutation time, thereby lowering the - g m transistor's noise-to-phase noise (PN) conversion. Prototyped in 65-nm CMOS, the class- F -1 oscillator at 4 GHz exhibits a PN of -144.8 dBc/Hz at a 10-MHz offset, while offering a tuning range of 3.5-4.5 GHz. The corresponding figure of merit (FoM) is 196.1 dBc/Hz, and the die area is 0.14 mm 2 . Institute of Electrical and Electronics Engineers 2018 Article PeerReviewed Lim, Chee Cheow and Ramiah, Harikrishnan and Yin, Jun and Mak, Pui-In and Martins, Rui Paulo (2018) An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances. IEEE Journal of Solid-State Circuits, 53 (12). pp. 3528-3539. ISSN 0018-9200 https://doi.org/10.1109/JSSC.2018.2875099 doi:10.1109/JSSC.2018.2875099
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Lim, Chee Cheow
Ramiah, Harikrishnan
Yin, Jun
Mak, Pui-In
Martins, Rui Paulo
An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances
description This paper details the theory and implementation of an inverse-class-F (class-F -1 ) CMOS oscillator. It features: 1) a single-ended PMOS-NMOS-complementary architecture to generate the differential outputs and 2) a transformer-based two-port resonator to boost the drain-to-gate voltage gain (A V ) while creating two intrinsic-high-Q impedance peaks at the fundamental (f LO ) and double (2f LO ) oscillation frequencies. The enlarged second harmonic voltage extends the flat span in which the impulse sensitivity function (ISF) is minimum, and the amplified gate voltage swing reduces the current commutation time, thereby lowering the - g m transistor's noise-to-phase noise (PN) conversion. Prototyped in 65-nm CMOS, the class- F -1 oscillator at 4 GHz exhibits a PN of -144.8 dBc/Hz at a 10-MHz offset, while offering a tuning range of 3.5-4.5 GHz. The corresponding figure of merit (FoM) is 196.1 dBc/Hz, and the die area is 0.14 mm 2 .
format Article
author Lim, Chee Cheow
Ramiah, Harikrishnan
Yin, Jun
Mak, Pui-In
Martins, Rui Paulo
author_facet Lim, Chee Cheow
Ramiah, Harikrishnan
Yin, Jun
Mak, Pui-In
Martins, Rui Paulo
author_sort Lim, Chee Cheow
title An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances
title_short An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances
title_full An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances
title_fullStr An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances
title_full_unstemmed An Inverse-Class-F CMOS Oscillator With Intrinsic-High-Q First Harmonic and Second Harmonic Resonances
title_sort inverse-class-f cmos oscillator with intrinsic-high-q first harmonic and second harmonic resonances
publisher Institute of Electrical and Electronics Engineers
publishDate 2018
url http://eprints.um.edu.my/21460/
https://doi.org/10.1109/JSSC.2018.2875099
_version_ 1643691569840128000
score 13.211869

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