Cover Image

Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode

Poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) based vertical organic light-emitting transistors (VOLETs) have been fabricated. The VOLETs were constructed with a bulk layer of indium-tin-oxide (ITO) and poly(2,3dihydrothieno-1,4-dioxin)–poly(styrenesulfonate) (PEDOT:PSS) a...

Full description

Saved in:
Bibliographic Details
Main Authors: Mohd Sarjidan, Mohd Arif, Abd Majid, Wan Haliza
Format: Article
Published: INOE 2018
Subjects:
Q Science (General)
QC Physics
Online Access:http://eprints.um.edu.my/21234/
https://joam.inoe.ro/index.php?option=magazine&op=view&idu=4223&catid=111
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.um.eprints.21234
record_format eprints
spelling my.um.eprints.212342019-05-15T06:46:04Z http://eprints.um.edu.my/21234/ Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode Mohd Sarjidan, Mohd Arif Abd Majid, Wan Haliza Q Science (General) QC Physics Poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) based vertical organic light-emitting transistors (VOLETs) have been fabricated. The VOLETs were constructed with a bulk layer of indium-tin-oxide (ITO) and poly(2,3dihydrothieno-1,4-dioxin)–poly(styrenesulfonate) (PEDOT:PSS) as a drain, organic electroluminescent layer of MEH-PPV, an ultra-thin aluminum (Al) as a source, lithium fluoride (LiF) as dielectric and a thick Al as a gate. Electrical and luminescence properties of the devices were investigated. In such VOLETs, the negative bias on the gate electrode has induced a high current density and brighter luminescence, which corresponding to a strong energy band bending in the MEH-PPV layer. Device physics of the fabricated VOLETs were discussed in detail. INOE 2018 Article PeerReviewed Mohd Sarjidan, Mohd Arif and Abd Majid, Wan Haliza (2018) Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode. Journal of Optoelectronics and Advanced Materials, 20 (5-6). pp. 285-289. ISSN 1454-4164 https://joam.inoe.ro/index.php?option=magazine&op=view&idu=4223&catid=111
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic Q Science (General)
QC Physics
spellingShingle Q Science (General)
QC Physics
Mohd Sarjidan, Mohd Arif
Abd Majid, Wan Haliza
Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode
description Poly[2-methoxy-5-(2'-ethylhexyloxy)-p-phenylene vinylene] (MEH-PPV) based vertical organic light-emitting transistors (VOLETs) have been fabricated. The VOLETs were constructed with a bulk layer of indium-tin-oxide (ITO) and poly(2,3dihydrothieno-1,4-dioxin)–poly(styrenesulfonate) (PEDOT:PSS) as a drain, organic electroluminescent layer of MEH-PPV, an ultra-thin aluminum (Al) as a source, lithium fluoride (LiF) as dielectric and a thick Al as a gate. Electrical and luminescence properties of the devices were investigated. In such VOLETs, the negative bias on the gate electrode has induced a high current density and brighter luminescence, which corresponding to a strong energy band bending in the MEH-PPV layer. Device physics of the fabricated VOLETs were discussed in detail.
format Article
author Mohd Sarjidan, Mohd Arif
Abd Majid, Wan Haliza
author_facet Mohd Sarjidan, Mohd Arif
Abd Majid, Wan Haliza
author_sort Mohd Sarjidan, Mohd Arif
title Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode
title_short Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode
title_full Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode
title_fullStr Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode
title_full_unstemmed Electrical and luminescence properties of MEH-PPV vertical organic light-emitting transistors with an ultra-thin aluminum source electrode
title_sort electrical and luminescence properties of meh-ppv vertical organic light-emitting transistors with an ultra-thin aluminum source electrode
publisher INOE
publishDate 2018
url http://eprints.um.edu.my/21234/
https://joam.inoe.ro/index.php?option=magazine&op=view&idu=4223&catid=111
_version_ 1643691505348509696
score 13.211869

Similar Items