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Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application

Maghemite nanoparticles (γ-Fe 2 O 3 NPs) were synthesized using Massart procedure. The formation reaction were optimized by varying the concentration of ferric nitrate solution (Fe(NO 3 ) 3 ) (0.1, 0.3, 0.5, 0.7 and 1.0 M). All samples were characterized by means of x-ray Diffractometer (XRD), Raman...

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Main Authors: Abu Hussein, Nurul Athirah, Ang, Bee Chin, Wong, Yew Hoong, Ong, Boon Hoong, Baharuddin, Aainaa Aqilah
Format: Article
Published: IOP Publishing 2018
Subjects:
TJ Mechanical engineering and machinery
TP Chemical technology
Online Access:http://eprints.um.edu.my/21092/
https://doi.org/10.1088/2053-1591/aac674
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spelling my.um.eprints.210922019-04-26T08:55:37Z http://eprints.um.edu.my/21092/ Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application Abu Hussein, Nurul Athirah Ang, Bee Chin Wong, Yew Hoong Ong, Boon Hoong Baharuddin, Aainaa Aqilah TJ Mechanical engineering and machinery TP Chemical technology Maghemite nanoparticles (γ-Fe 2 O 3 NPs) were synthesized using Massart procedure. The formation reaction were optimized by varying the concentration of ferric nitrate solution (Fe(NO 3 ) 3 ) (0.1, 0.3, 0.5, 0.7 and 1.0 M). All samples were characterized by means of x-ray Diffractometer (XRD), Raman Spectroscopy, Transmission Electron Microscope (TEM) and Alternating Gradient Magnetometer (AGM). The smallest size of the NPs were chosen to be deposited on Silicon (100) substrate by spin coating technique. Annealing process of the samples were performed in Argon ambient at different temperatures (600, 700, 800 and 900°) for 20 min. Metal-oxide-semiconductor capacitors were then fabricated by depositing Aluminium as the gate electrode. The effect of the annealing process on the structural and electrical properties of γ-Fe 2 O 3 NPs thin film were investigated. The structural properties of the deposited thin film were evaluated by XRD analysis, Atomic Force Microscopy (AFM) and Raman Analysis. On the other hand, the electrical properties was conducted by current-voltage analysis. It was revealed that the difference in the annealing temperature affect the grain size, surface roughness, distribution of the nanoparticles as well as the electrical performance of the samples where low annealing temperature (600 °C) gives low leakage current while high annealing temperature (900 °C) gives high electrical breakdown. IOP Publishing 2018 Article PeerReviewed Abu Hussein, Nurul Athirah and Ang, Bee Chin and Wong, Yew Hoong and Ong, Boon Hoong and Baharuddin, Aainaa Aqilah (2018) Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application. Materials Research Express, 5 (6). 065020. ISSN 2053-1591 https://doi.org/10.1088/2053-1591/aac674 doi:10.1088/2053-1591/aac674
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic TJ Mechanical engineering and machinery
TP Chemical technology
spellingShingle TJ Mechanical engineering and machinery
TP Chemical technology
Abu Hussein, Nurul Athirah
Ang, Bee Chin
Wong, Yew Hoong
Ong, Boon Hoong
Baharuddin, Aainaa Aqilah
Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application
description Maghemite nanoparticles (γ-Fe 2 O 3 NPs) were synthesized using Massart procedure. The formation reaction were optimized by varying the concentration of ferric nitrate solution (Fe(NO 3 ) 3 ) (0.1, 0.3, 0.5, 0.7 and 1.0 M). All samples were characterized by means of x-ray Diffractometer (XRD), Raman Spectroscopy, Transmission Electron Microscope (TEM) and Alternating Gradient Magnetometer (AGM). The smallest size of the NPs were chosen to be deposited on Silicon (100) substrate by spin coating technique. Annealing process of the samples were performed in Argon ambient at different temperatures (600, 700, 800 and 900°) for 20 min. Metal-oxide-semiconductor capacitors were then fabricated by depositing Aluminium as the gate electrode. The effect of the annealing process on the structural and electrical properties of γ-Fe 2 O 3 NPs thin film were investigated. The structural properties of the deposited thin film were evaluated by XRD analysis, Atomic Force Microscopy (AFM) and Raman Analysis. On the other hand, the electrical properties was conducted by current-voltage analysis. It was revealed that the difference in the annealing temperature affect the grain size, surface roughness, distribution of the nanoparticles as well as the electrical performance of the samples where low annealing temperature (600 °C) gives low leakage current while high annealing temperature (900 °C) gives high electrical breakdown.
format Article
author Abu Hussein, Nurul Athirah
Ang, Bee Chin
Wong, Yew Hoong
Ong, Boon Hoong
Baharuddin, Aainaa Aqilah
author_facet Abu Hussein, Nurul Athirah
Ang, Bee Chin
Wong, Yew Hoong
Ong, Boon Hoong
Baharuddin, Aainaa Aqilah
author_sort Abu Hussein, Nurul Athirah
title Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application
title_short Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application
title_full Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application
title_fullStr Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application
title_full_unstemmed Synthesis and characterization of γ-Fe2O3 NPs on silicon substrate for power device application
title_sort synthesis and characterization of γ-fe2o3 nps on silicon substrate for power device application
publisher IOP Publishing
publishDate 2018
url http://eprints.um.edu.my/21092/
https://doi.org/10.1088/2053-1591/aac674
_version_ 1643691463888863232
score 13.211869

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