67 cm long bismuth-based erbium doped fiber amplifier with wideband operation
In this paper, we demonstrate a wideband Bismuthbased erbium doped fiber amplifier (Bi-EDFA) using two pieces of bismuth-based erbium-doped fiber (Bi-EDF) with a total length of 67 cm as gain media in a double pass parallel configuration. Both Bi-EDFs have an erbium ion concentration of 6300 ppm. Co...
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my.um.eprints.198772019-01-02T04:08:11Z http://eprints.um.edu.my/19877/ 67 cm long bismuth-based erbium doped fiber amplifier with wideband operation Cheng, Xiau S. Hamida, Belal Ahmed Naji, Ahmed Wathik Ahmad, Harith Harun, Sulaiman Wadi QC Physics TK Electrical engineering. Electronics Nuclear engineering In this paper, we demonstrate a wideband Bismuthbased erbium doped fiber amplifier (Bi-EDFA) using two pieces of bismuth-based erbium-doped fiber (Bi-EDF) with a total length of 67 cm as gain media in a double pass parallel configuration. Both Bi-EDFs have an erbium ion concentration of 6300 ppm. Compared to conventional silica-based erbiumdoped fiber amplifier (Si-EDFA) with the same amount of erbium ions, the Bi-EDFA provides a higher attainable gain as well as a greater amplification bandwidth, which ranging from 1525 to 1620 nm. The proposed Bi-EDFA achieved a wideband gain of around 18 dB within the wavelength region from 1530 to 1565 nm. The noise figures are maintained below 10 dB within a wide wavelength region from 1535 nm to 1620 nm. IOP Publishing 2011 Article PeerReviewed Cheng, Xiau S. and Hamida, Belal Ahmed and Naji, Ahmed Wathik and Ahmad, Harith and Harun, Sulaiman Wadi (2011) 67 cm long bismuth-based erbium doped fiber amplifier with wideband operation. Laser Physics Letters, 8 (11). pp. 814-817. ISSN 1612-2011 https://doi.org/10.1002/lapl.201110061 doi:10.1002/lapl.201110061 |
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QC Physics TK Electrical engineering. Electronics Nuclear engineering Cheng, Xiau S. Hamida, Belal Ahmed Naji, Ahmed Wathik Ahmad, Harith Harun, Sulaiman Wadi 67 cm long bismuth-based erbium doped fiber amplifier with wideband operation |
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In this paper, we demonstrate a wideband Bismuthbased erbium doped fiber amplifier (Bi-EDFA) using two pieces of bismuth-based erbium-doped fiber (Bi-EDF) with a total length of 67 cm as gain media in a double pass parallel configuration. Both Bi-EDFs have an erbium ion concentration of 6300 ppm. Compared to conventional silica-based erbiumdoped fiber amplifier (Si-EDFA) with the same amount of erbium ions, the Bi-EDFA provides a higher attainable gain as well as a greater amplification bandwidth, which ranging from 1525 to 1620 nm. The proposed Bi-EDFA achieved a wideband gain of around 18 dB within the wavelength region from 1530 to 1565 nm. The noise figures are maintained below 10 dB within a wide wavelength region from 1535 nm to 1620 nm. |
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Article |
author |
Cheng, Xiau S. Hamida, Belal Ahmed Naji, Ahmed Wathik Ahmad, Harith Harun, Sulaiman Wadi |
author_facet |
Cheng, Xiau S. Hamida, Belal Ahmed Naji, Ahmed Wathik Ahmad, Harith Harun, Sulaiman Wadi |
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Cheng, Xiau S. |
title |
67 cm long bismuth-based erbium doped fiber amplifier with wideband operation |
title_short |
67 cm long bismuth-based erbium doped fiber amplifier with wideband operation |
title_full |
67 cm long bismuth-based erbium doped fiber amplifier with wideband operation |
title_fullStr |
67 cm long bismuth-based erbium doped fiber amplifier with wideband operation |
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67 cm long bismuth-based erbium doped fiber amplifier with wideband operation |
title_sort |
67 cm long bismuth-based erbium doped fiber amplifier with wideband operation |
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IOP Publishing |
publishDate |
2011 |
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http://eprints.um.edu.my/19877/ https://doi.org/10.1002/lapl.201110061 |
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