Humidity influenced capacitance and resistance of an Al/DNA/Al Schottky diode irradiated by alpha particles

Deoxyribonucleic acid or DNA based sensors, especially as humidity and alpha particle sensors have become quite popular in recent times due to flexible and highly optimizable nature of this fundamental biomaterial. Application of DNA electronics allow for more sensitive, accurate and effective senso...

Full description

Saved in:
Bibliographic Details
Main Authors: Al-Ta'ii, H.M.J., Amin, Y.M., Periasamy, V.
Format: Article
Published: Nature Publishing Group 2016
Subjects:
Online Access:http://eprints.um.edu.my/18266/
https://doi.org/10.1038/srep25519
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.um.eprints.18266
record_format eprints
spelling my.um.eprints.182662017-11-14T08:16:51Z http://eprints.um.edu.my/18266/ Humidity influenced capacitance and resistance of an Al/DNA/Al Schottky diode irradiated by alpha particles Al-Ta'ii, H.M.J. Amin, Y.M. Periasamy, V. Q Science (General) QC Physics Deoxyribonucleic acid or DNA based sensors, especially as humidity and alpha particle sensors have become quite popular in recent times due to flexible and highly optimizable nature of this fundamental biomaterial. Application of DNA electronics allow for more sensitive, accurate and effective sensors to be developed and fabricated. In this work, we examined the effect of different humidity conditions on the capacitive and resistive response of Aluminum (Al)/DNA/Al Schottky barrier structure when bombarded by time-dependent dosages of alpha particles. Based on current-voltage profiles, which demonstrated rectifying behaviours, Schottky diode parameters such as ideality factor, barrier height and series resistance was calculated. Results observed generally pointed towards a decrease in the resistance value from the pristine to the radiated structures. It was also demonstrated that under the effect of humidity, the capacitance of the DNA thin film increased from 0.05894 to 92.736 nF, with rising relative humidity level. We also observed the occurrence of the hypersensitivity phenomena after alpha irradiation between 2 to 4 min by observing a drop in the series resistance, crucial in the study of DNA damage and repair mechanisms. These observations may also suggest the exciting possibility of utilizing Al/DNA/Al Schottky diodes as potentially sensitive humidity sensors. Nature Publishing Group 2016 Article PeerReviewed Al-Ta'ii, H.M.J. and Amin, Y.M. and Periasamy, V. (2016) Humidity influenced capacitance and resistance of an Al/DNA/Al Schottky diode irradiated by alpha particles. Scientific Reports, 6. p. 25519. ISSN 2045-2322 https://doi.org/10.1038/srep25519 doi:10.1038/srep25519
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic Q Science (General)
QC Physics
spellingShingle Q Science (General)
QC Physics
Al-Ta'ii, H.M.J.
Amin, Y.M.
Periasamy, V.
Humidity influenced capacitance and resistance of an Al/DNA/Al Schottky diode irradiated by alpha particles
description Deoxyribonucleic acid or DNA based sensors, especially as humidity and alpha particle sensors have become quite popular in recent times due to flexible and highly optimizable nature of this fundamental biomaterial. Application of DNA electronics allow for more sensitive, accurate and effective sensors to be developed and fabricated. In this work, we examined the effect of different humidity conditions on the capacitive and resistive response of Aluminum (Al)/DNA/Al Schottky barrier structure when bombarded by time-dependent dosages of alpha particles. Based on current-voltage profiles, which demonstrated rectifying behaviours, Schottky diode parameters such as ideality factor, barrier height and series resistance was calculated. Results observed generally pointed towards a decrease in the resistance value from the pristine to the radiated structures. It was also demonstrated that under the effect of humidity, the capacitance of the DNA thin film increased from 0.05894 to 92.736 nF, with rising relative humidity level. We also observed the occurrence of the hypersensitivity phenomena after alpha irradiation between 2 to 4 min by observing a drop in the series resistance, crucial in the study of DNA damage and repair mechanisms. These observations may also suggest the exciting possibility of utilizing Al/DNA/Al Schottky diodes as potentially sensitive humidity sensors.
format Article
author Al-Ta'ii, H.M.J.
Amin, Y.M.
Periasamy, V.
author_facet Al-Ta'ii, H.M.J.
Amin, Y.M.
Periasamy, V.
author_sort Al-Ta'ii, H.M.J.
title Humidity influenced capacitance and resistance of an Al/DNA/Al Schottky diode irradiated by alpha particles
title_short Humidity influenced capacitance and resistance of an Al/DNA/Al Schottky diode irradiated by alpha particles
title_full Humidity influenced capacitance and resistance of an Al/DNA/Al Schottky diode irradiated by alpha particles
title_fullStr Humidity influenced capacitance and resistance of an Al/DNA/Al Schottky diode irradiated by alpha particles
title_full_unstemmed Humidity influenced capacitance and resistance of an Al/DNA/Al Schottky diode irradiated by alpha particles
title_sort humidity influenced capacitance and resistance of an al/dna/al schottky diode irradiated by alpha particles
publisher Nature Publishing Group
publishDate 2016
url http://eprints.um.edu.my/18266/
https://doi.org/10.1038/srep25519
_version_ 1643690657503510528
score 13.211869