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Structural, optical and electrical properties of Cu2Zn1−xCdxSnS4 quinternary alloys nanostructures deposited on porous silicon

The Cu2Zn1−xCdxSnS4 quinternary alloy nanostructures with different Cd contents were grown using spin coating technique on porous silicon (63.93 %) substrate. The structural properties of Cu2Zn1−xCdxSnS4/PS were investigated by X-ray diffraction and field emission-scanning electron microscope (FE-SE...

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Bibliographic Details
Main Authors: Ibraheam, A.S., Al-Douri, Yarub, Al-Fhdawi, J.M.S., Al-Jumaili, H.S., Verma, K.D., Hashim, U., Ayub, R.M., Rahim Ruslinda, A., Md Arshad, M.K., Reshak, A.H., Hamid, Sharifah Bee Abd
Format: Article
Published: Springer Verlag (Germany) 2016
Subjects:
QC Physics
TA Engineering (General). Civil engineering (General)
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.um.edu.my/17748/
http://dx.doi.org/10.1007/s00542-015-2647-8
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Summary:The Cu2Zn1−xCdxSnS4 quinternary alloy nanostructures with different Cd contents were grown using spin coating technique on porous silicon (63.93 %) substrate. The structural properties of Cu2Zn1−xCdxSnS4/PS were investigated by X-ray diffraction and field emission-scanning electron microscope (FE-SEM). The optical properties studied through photoluminescence technique, indicated that the band gap is shifted as Cd content increases from 1.84 eV at x = 0 to 1.76 eV at x = 1. The electrical characterization of the Ag/n-PS/Cu2Zn1−xCdxSnS4/Ag diode through current to voltage (I–V) characterization shows the highest photo-response of (value if any) at Cu2Zn0.4Cd0.6SnS4 composition.

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