Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation

Amorphous aluminum indium nitride (AlxIn1-xN) thin films were deposited on quartz substrates by plasma-assisted dual source reactive evaporation system. In-rich (x = 0.10 and 0.18) and Al-rich (x = 0.60 and 0.64) films were prepared by simply varying an AC voltage applied to indium wire. The X-ray-d...

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Main Authors: Alizadeh, M., Ganesh, V., Mehdipour, H., Nazarudin, N.F.F., Goh, B.T., Shuhaimi, A., Rahman, S.A.
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Published: Elsevier 2015
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Online Access:http://eprints.um.edu.my/13250/
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spelling my.um.eprints.132502015-04-13T02:43:50Z http://eprints.um.edu.my/13250/ Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation Alizadeh, M. Ganesh, V. Mehdipour, H. Nazarudin, N.F.F. Goh, B.T. Shuhaimi, A. Rahman, S.A. Q Science (General) Amorphous aluminum indium nitride (AlxIn1-xN) thin films were deposited on quartz substrates by plasma-assisted dual source reactive evaporation system. In-rich (x = 0.10 and 0.18) and Al-rich (x = 0.60 and 0.64) films were prepared by simply varying an AC voltage applied to indium wire. The X-ray-diffraction patterns revealed a small broad peak assigned to Al0.10In0.90N (002) plane, but no perceivable peaks assigned to crystalline AlxIn1-xN were observed for the films with x = 0.18, 0.60 and 0.64. The morphology of the film was changed from clusters of small grains to uniformly shaped particles with decrease of x. The band gap energy of the films increased from 1.08 eV to 2.50 eV as the Al composition varied from 0.1 to 0.64. Also, Raman results indicated that E-2(high) and A(1)(LO) peaks of the AlxIn1-xN films are remarkably blue-shifted by increasing x and the A(1)(LO) phonon mode of the Al-rich films exhibits two-mode behavior. A bowing parameter of 4.3 eV was obtained for AlInN films. The extrapolated value from bowing equation was 0.85 eV for band gap energy of InN. (C) 2015 Elsevier B.V. All rights reserved. Elsevier 2015 Article PeerReviewed Alizadeh, M. and Ganesh, V. and Mehdipour, H. and Nazarudin, N.F.F. and Goh, B.T. and Shuhaimi, A. and Rahman, S.A. (2015) Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation. Journal of Alloys and Compounds, 632. pp. 741-747.
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic Q Science (General)
spellingShingle Q Science (General)
Alizadeh, M.
Ganesh, V.
Mehdipour, H.
Nazarudin, N.F.F.
Goh, B.T.
Shuhaimi, A.
Rahman, S.A.
Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation
description Amorphous aluminum indium nitride (AlxIn1-xN) thin films were deposited on quartz substrates by plasma-assisted dual source reactive evaporation system. In-rich (x = 0.10 and 0.18) and Al-rich (x = 0.60 and 0.64) films were prepared by simply varying an AC voltage applied to indium wire. The X-ray-diffraction patterns revealed a small broad peak assigned to Al0.10In0.90N (002) plane, but no perceivable peaks assigned to crystalline AlxIn1-xN were observed for the films with x = 0.18, 0.60 and 0.64. The morphology of the film was changed from clusters of small grains to uniformly shaped particles with decrease of x. The band gap energy of the films increased from 1.08 eV to 2.50 eV as the Al composition varied from 0.1 to 0.64. Also, Raman results indicated that E-2(high) and A(1)(LO) peaks of the AlxIn1-xN films are remarkably blue-shifted by increasing x and the A(1)(LO) phonon mode of the Al-rich films exhibits two-mode behavior. A bowing parameter of 4.3 eV was obtained for AlInN films. The extrapolated value from bowing equation was 0.85 eV for band gap energy of InN. (C) 2015 Elsevier B.V. All rights reserved.
format Article
author Alizadeh, M.
Ganesh, V.
Mehdipour, H.
Nazarudin, N.F.F.
Goh, B.T.
Shuhaimi, A.
Rahman, S.A.
author_facet Alizadeh, M.
Ganesh, V.
Mehdipour, H.
Nazarudin, N.F.F.
Goh, B.T.
Shuhaimi, A.
Rahman, S.A.
author_sort Alizadeh, M.
title Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation
title_short Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation
title_full Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation
title_fullStr Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation
title_full_unstemmed Structural ordering, morphology and optical properties of amorphous AlxIn1-xN thin films grown by plasma-assisted dual source reactive evaporation
title_sort structural ordering, morphology and optical properties of amorphous alxin1-xn thin films grown by plasma-assisted dual source reactive evaporation
publisher Elsevier
publishDate 2015
url http://eprints.um.edu.my/13250/
_version_ 1643689501345710080
score 13.244745