Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy
Interfacial energy alignments at the anode of solution processable organic photovoltaics are rarely studied. Here we use blended regio-regular poly(3-hexylthiophene) (P3HT) : phenyl-C61-butyric acid methyl ester (PCBM) deposited on top of O2 plasma cleaned indium tin oxide (ITO) and poly(3,4-ethylen...
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2014
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my.um.eprints.129932015-03-10T07:59:32Z http://eprints.um.edu.my/12993/ Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy Whitcher, T.J. Talik, N.A. Woon, K.L. Chanlek, N. Nakajima, H. Saisopa, T. Songsiriritthigul, P. Q Science (General) Interfacial energy alignments at the anode of solution processable organic photovoltaics are rarely studied. Here we use blended regio-regular poly(3-hexylthiophene) (P3HT) : phenyl-C61-butyric acid methyl ester (PCBM) deposited on top of O2 plasma cleaned indium tin oxide (ITO) and poly(3,4-ethylene-dioxythiophene) : polystyrene sulfonic acid (PEDOT : PSS) as a platform to obtain the interfacial energy alignment using angular-resolved x-ray and ultraviolet photoelectron spectroscopy. A strong downward vacuum level bending of 1.3 eV at the interface for plasma-ITO/P3HT : PCBM is observed. This results in an interfacial energetic barrier as high as 2.5 eV for holes and a reduction of barrier for electrons. This could be one of the contributing factors that result in lower device efficiency in O2 plasma-ITO/P3HT : PCBM compared to O2 plasma-ITO/PEDOT : PSS/P3HT : PCBM. The full interfacial energy diagram is determined for O2 plasma-ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM. Such methods can be extended to study various interfacial properties of solution processable organic semiconducting materials. Institute of Physics 2014 Article PeerReviewed Whitcher, T.J. and Talik, N.A. and Woon, K.L. and Chanlek, N. and Nakajima, H. and Saisopa, T. and Songsiriritthigul, P. (2014) Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy. Journal of Physics D: Applied Physics, 47 (5). 055109. ISSN 0022-3727 http://iopscience.iop.org/0022-3727/47/5/055109?v_showaffiliations=yes http://dx.doi.org/10.1088/0022-3727/47/5/055109 |
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Q Science (General) Whitcher, T.J. Talik, N.A. Woon, K.L. Chanlek, N. Nakajima, H. Saisopa, T. Songsiriritthigul, P. Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy |
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Interfacial energy alignments at the anode of solution processable organic photovoltaics are rarely studied. Here we use blended regio-regular poly(3-hexylthiophene) (P3HT) : phenyl-C61-butyric acid methyl ester (PCBM) deposited on top of O2 plasma cleaned indium tin oxide (ITO) and poly(3,4-ethylene-dioxythiophene) : polystyrene sulfonic acid (PEDOT : PSS) as a platform to obtain the interfacial energy alignment using angular-resolved x-ray and ultraviolet photoelectron spectroscopy. A strong downward vacuum level bending of 1.3 eV at the interface for plasma-ITO/P3HT : PCBM is observed. This results in an interfacial energetic barrier as high as 2.5 eV for holes and a reduction of barrier for electrons. This could be one of the contributing factors that result in lower device efficiency in O2 plasma-ITO/P3HT : PCBM compared to O2 plasma-ITO/PEDOT : PSS/P3HT : PCBM. The full interfacial energy diagram is determined for O2 plasma-ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM. Such methods can be extended to study various interfacial properties of solution processable organic semiconducting materials. |
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author |
Whitcher, T.J. Talik, N.A. Woon, K.L. Chanlek, N. Nakajima, H. Saisopa, T. Songsiriritthigul, P. |
author_facet |
Whitcher, T.J. Talik, N.A. Woon, K.L. Chanlek, N. Nakajima, H. Saisopa, T. Songsiriritthigul, P. |
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Whitcher, T.J. |
title |
Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy |
title_short |
Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy |
title_full |
Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy |
title_fullStr |
Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy |
title_full_unstemmed |
Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy |
title_sort |
determination of energy levels at the interface between o2 plasma treated ito/p3ht : pcbm and pedot : pss/p3ht : pcbm using angular-resolved x-ray and ultraviolet photoelectron spectroscopy |
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Institute of Physics |
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2014 |
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http://eprints.um.edu.my/12993/ http://iopscience.iop.org/0022-3727/47/5/055109?v_showaffiliations=yes http://dx.doi.org/10.1088/0022-3727/47/5/055109 |
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