Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy

Interfacial energy alignments at the anode of solution processable organic photovoltaics are rarely studied. Here we use blended regio-regular poly(3-hexylthiophene) (P3HT) : phenyl-C61-butyric acid methyl ester (PCBM) deposited on top of O2 plasma cleaned indium tin oxide (ITO) and poly(3,4-ethylen...

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Main Authors: Whitcher, T.J., Talik, N.A., Woon, K.L., Chanlek, N., Nakajima, H., Saisopa, T., Songsiriritthigul, P.
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出版: Institute of Physics 2014
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在線閱讀:http://eprints.um.edu.my/12993/
http://iopscience.iop.org/0022-3727/47/5/055109?v_showaffiliations=yes
http://dx.doi.org/10.1088/0022-3727/47/5/055109
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spelling my.um.eprints.129932015-03-10T07:59:32Z http://eprints.um.edu.my/12993/ Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy Whitcher, T.J. Talik, N.A. Woon, K.L. Chanlek, N. Nakajima, H. Saisopa, T. Songsiriritthigul, P. Q Science (General) Interfacial energy alignments at the anode of solution processable organic photovoltaics are rarely studied. Here we use blended regio-regular poly(3-hexylthiophene) (P3HT) : phenyl-C61-butyric acid methyl ester (PCBM) deposited on top of O2 plasma cleaned indium tin oxide (ITO) and poly(3,4-ethylene-dioxythiophene) : polystyrene sulfonic acid (PEDOT : PSS) as a platform to obtain the interfacial energy alignment using angular-resolved x-ray and ultraviolet photoelectron spectroscopy. A strong downward vacuum level bending of 1.3 eV at the interface for plasma-ITO/P3HT : PCBM is observed. This results in an interfacial energetic barrier as high as 2.5 eV for holes and a reduction of barrier for electrons. This could be one of the contributing factors that result in lower device efficiency in O2 plasma-ITO/P3HT : PCBM compared to O2 plasma-ITO/PEDOT : PSS/P3HT : PCBM. The full interfacial energy diagram is determined for O2 plasma-ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM. Such methods can be extended to study various interfacial properties of solution processable organic semiconducting materials. Institute of Physics 2014 Article PeerReviewed Whitcher, T.J. and Talik, N.A. and Woon, K.L. and Chanlek, N. and Nakajima, H. and Saisopa, T. and Songsiriritthigul, P. (2014) Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy. Journal of Physics D: Applied Physics, 47 (5). 055109. ISSN 0022-3727 http://iopscience.iop.org/0022-3727/47/5/055109?v_showaffiliations=yes http://dx.doi.org/10.1088/0022-3727/47/5/055109
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic Q Science (General)
spellingShingle Q Science (General)
Whitcher, T.J.
Talik, N.A.
Woon, K.L.
Chanlek, N.
Nakajima, H.
Saisopa, T.
Songsiriritthigul, P.
Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy
description Interfacial energy alignments at the anode of solution processable organic photovoltaics are rarely studied. Here we use blended regio-regular poly(3-hexylthiophene) (P3HT) : phenyl-C61-butyric acid methyl ester (PCBM) deposited on top of O2 plasma cleaned indium tin oxide (ITO) and poly(3,4-ethylene-dioxythiophene) : polystyrene sulfonic acid (PEDOT : PSS) as a platform to obtain the interfacial energy alignment using angular-resolved x-ray and ultraviolet photoelectron spectroscopy. A strong downward vacuum level bending of 1.3 eV at the interface for plasma-ITO/P3HT : PCBM is observed. This results in an interfacial energetic barrier as high as 2.5 eV for holes and a reduction of barrier for electrons. This could be one of the contributing factors that result in lower device efficiency in O2 plasma-ITO/P3HT : PCBM compared to O2 plasma-ITO/PEDOT : PSS/P3HT : PCBM. The full interfacial energy diagram is determined for O2 plasma-ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM. Such methods can be extended to study various interfacial properties of solution processable organic semiconducting materials.
format Article
author Whitcher, T.J.
Talik, N.A.
Woon, K.L.
Chanlek, N.
Nakajima, H.
Saisopa, T.
Songsiriritthigul, P.
author_facet Whitcher, T.J.
Talik, N.A.
Woon, K.L.
Chanlek, N.
Nakajima, H.
Saisopa, T.
Songsiriritthigul, P.
author_sort Whitcher, T.J.
title Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy
title_short Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy
title_full Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy
title_fullStr Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy
title_full_unstemmed Determination of energy levels at the interface between O2 plasma treated ITO/P3HT : PCBM and PEDOT : PSS/P3HT : PCBM using angular-resolved x-ray and ultraviolet photoelectron spectroscopy
title_sort determination of energy levels at the interface between o2 plasma treated ito/p3ht : pcbm and pedot : pss/p3ht : pcbm using angular-resolved x-ray and ultraviolet photoelectron spectroscopy
publisher Institute of Physics
publishDate 2014
url http://eprints.um.edu.my/12993/
http://iopscience.iop.org/0022-3727/47/5/055109?v_showaffiliations=yes
http://dx.doi.org/10.1088/0022-3727/47/5/055109
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score 13.251813