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Scaling behaviors of transient noise current in organic field-effect transistors

Top-contact and bottom-gate organic field-effect transistors (OFETs) based on poly(3-hexylthiophene), P3HT polymer has been fabricated with thermal treatment condition. Transient noise currents of the OFETs are measured at various source–drain voltages ranging from 0 V to −60 V with respect to a fix...

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Main Authors: Choo, K.Y., Muniandy, S.V., Chua, C.L., Woon, K.L.
Format: Article
Published: Elsevier 2012
Subjects:
Q Science (General)
QC Physics
Online Access:http://eprints.um.edu.my/12970/
http://www.sciencedirect.com/science/article/pii/S1566119912001395
http://dx.doi.org/10.1016/j.orgel.2012.04.003
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spelling my.um.eprints.129702015-03-10T04:07:58Z http://eprints.um.edu.my/12970/ Scaling behaviors of transient noise current in organic field-effect transistors Choo, K.Y. Muniandy, S.V. Chua, C.L. Woon, K.L. Q Science (General) QC Physics Top-contact and bottom-gate organic field-effect transistors (OFETs) based on poly(3-hexylthiophene), P3HT polymer has been fabricated with thermal treatment condition. Transient noise currents of the OFETs are measured at various source–drain voltages ranging from 0 V to −60 V with respect to a fixed gate voltage of −60 V. The results from conventional power spectral density method are compared with the more robust Detrended Fluctuation Analysis. The latter has been proven to be reliable for fractal signals particularly in the presence of nonstationary effects. Interesting transitions between multiscaling and monoscaling behaviors are observed in the power spectral density as well as the Detrended Fluctuation Analysis plots for different applied source–drain voltage Vds. Uncorrelated white noise characteristics are observed for noise current measured at low Vds, meanwhile 1/f noise-like scaling behaviors are observed at intermediate Vds. At higher Vds, the noise characteristics appeared to be close to Brownian-like power-law behavior. The scaling characteristics of the transient noise current can be related to the charge carrier dynamics. It is also found that large numbers of trap centers are induced when the device is stressed at high applied Vds. The existence of these trap centers would disperse charge carriers, leading to 1/f type noise that could diminish the presence of Brownian noise in a very short time. Elsevier 2012-08 Article PeerReviewed Choo, K.Y. and Muniandy, S.V. and Chua, C.L. and Woon, K.L. (2012) Scaling behaviors of transient noise current in organic field-effect transistors. Organic Electronics, 13 (8). pp. 1370-1376. ISSN 1566-1199 http://www.sciencedirect.com/science/article/pii/S1566119912001395 http://dx.doi.org/10.1016/j.orgel.2012.04.003
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic Q Science (General)
QC Physics
spellingShingle Q Science (General)
QC Physics
Choo, K.Y.
Muniandy, S.V.
Chua, C.L.
Woon, K.L.
Scaling behaviors of transient noise current in organic field-effect transistors
description Top-contact and bottom-gate organic field-effect transistors (OFETs) based on poly(3-hexylthiophene), P3HT polymer has been fabricated with thermal treatment condition. Transient noise currents of the OFETs are measured at various source–drain voltages ranging from 0 V to −60 V with respect to a fixed gate voltage of −60 V. The results from conventional power spectral density method are compared with the more robust Detrended Fluctuation Analysis. The latter has been proven to be reliable for fractal signals particularly in the presence of nonstationary effects. Interesting transitions between multiscaling and monoscaling behaviors are observed in the power spectral density as well as the Detrended Fluctuation Analysis plots for different applied source–drain voltage Vds. Uncorrelated white noise characteristics are observed for noise current measured at low Vds, meanwhile 1/f noise-like scaling behaviors are observed at intermediate Vds. At higher Vds, the noise characteristics appeared to be close to Brownian-like power-law behavior. The scaling characteristics of the transient noise current can be related to the charge carrier dynamics. It is also found that large numbers of trap centers are induced when the device is stressed at high applied Vds. The existence of these trap centers would disperse charge carriers, leading to 1/f type noise that could diminish the presence of Brownian noise in a very short time.
format Article
author Choo, K.Y.
Muniandy, S.V.
Chua, C.L.
Woon, K.L.
author_facet Choo, K.Y.
Muniandy, S.V.
Chua, C.L.
Woon, K.L.
author_sort Choo, K.Y.
title Scaling behaviors of transient noise current in organic field-effect transistors
title_short Scaling behaviors of transient noise current in organic field-effect transistors
title_full Scaling behaviors of transient noise current in organic field-effect transistors
title_fullStr Scaling behaviors of transient noise current in organic field-effect transistors
title_full_unstemmed Scaling behaviors of transient noise current in organic field-effect transistors
title_sort scaling behaviors of transient noise current in organic field-effect transistors
publisher Elsevier
publishDate 2012
url http://eprints.um.edu.my/12970/
http://www.sciencedirect.com/science/article/pii/S1566119912001395
http://dx.doi.org/10.1016/j.orgel.2012.04.003
_version_ 1643689425657397248
score 13.211869

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