Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10
The effect of gamma irradiation on SixTe60−xAs30Ge10, where x= 5, 12 and 20, has been studied using thermoluminescence (TL). As expected in semiconductor materials, both x=5 and 20 chalcogenides showed a wide TL peak ranging from ∼80–300 °C. However, these two materials also exhibited a sharp peak a...
Saved in:
| Main Authors: | , , |
|---|---|
| 格式: | Article |
| 出版: |
Springer Verlag (Germany)
1992
|
| 主題: | |
| 在線閱讀: | http://eprints.um.edu.my/12159/ http://link.springer.com/article/10.1007/BF00541618 http://dx.doi.org/10.1007/BF00541618 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|