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Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10

The effect of gamma irradiation on SixTe60−xAs30Ge10, where x= 5, 12 and 20, has been studied using thermoluminescence (TL). As expected in semiconductor materials, both x=5 and 20 chalcogenides showed a wide TL peak ranging from ∼80–300 °C. However, these two materials also exhibited a sharp peak a...

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Main Authors: Maged, A.F., Amin, Y.M., Durrani, S.A.
Format: Article
Published: Springer Verlag (Germany) 1992
Subjects:
Q Science (General)
Online Access:http://eprints.um.edu.my/12159/
http://link.springer.com/article/10.1007/BF00541618
http://dx.doi.org/10.1007/BF00541618
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spelling my.um.eprints.121592015-01-16T08:50:31Z http://eprints.um.edu.my/12159/ Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10 Maged, A.F. Amin, Y.M. Durrani, S.A. Q Science (General) The effect of gamma irradiation on SixTe60−xAs30Ge10, where x= 5, 12 and 20, has been studied using thermoluminescence (TL). As expected in semiconductor materials, both x=5 and 20 chalcogenides showed a wide TL peak ranging from ∼80–300 °C. However, these two materials also exhibited a sharp peak at ∼360 and ∼380 °C for x = 5 and 20, respectively. On the other hand, the material with x=12 showed very little response to gamma radiation, but if the sample was exposed to ultraviolet light (after being glowed of any TL up to 500°C) and then glowed (called phototransfer-thermoluminescence), several peaks appeared at ∼80, 180, 300, and 350°C. The x= 5 and 20 samples did not show any response to ultraviolet light. Because the TL response depended on the ratio of Te/Si, it can be concluded that the TL technique can also be used to characterize semiconductor materials, and it would complement other techniques such as electrical conductivity and differential thermal analysis. Springer Verlag (Germany) 1992-10-15 Article PeerReviewed Maged, A.F. and Amin, Y.M. and Durrani, S.A. (1992) Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10. Journal of Materials Science, 27 (20). pp. 5536-5538. ISSN 0022-2461 http://link.springer.com/article/10.1007/BF00541618 http://dx.doi.org/10.1007/BF00541618
institution Universiti Malaya
building UM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaya
content_source UM Research Repository
url_provider http://eprints.um.edu.my/
topic Q Science (General)
spellingShingle Q Science (General)
Maged, A.F.
Amin, Y.M.
Durrani, S.A.
Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10
description The effect of gamma irradiation on SixTe60−xAs30Ge10, where x= 5, 12 and 20, has been studied using thermoluminescence (TL). As expected in semiconductor materials, both x=5 and 20 chalcogenides showed a wide TL peak ranging from ∼80–300 °C. However, these two materials also exhibited a sharp peak at ∼360 and ∼380 °C for x = 5 and 20, respectively. On the other hand, the material with x=12 showed very little response to gamma radiation, but if the sample was exposed to ultraviolet light (after being glowed of any TL up to 500°C) and then glowed (called phototransfer-thermoluminescence), several peaks appeared at ∼80, 180, 300, and 350°C. The x= 5 and 20 samples did not show any response to ultraviolet light. Because the TL response depended on the ratio of Te/Si, it can be concluded that the TL technique can also be used to characterize semiconductor materials, and it would complement other techniques such as electrical conductivity and differential thermal analysis.
format Article
author Maged, A.F.
Amin, Y.M.
Durrani, S.A.
author_facet Maged, A.F.
Amin, Y.M.
Durrani, S.A.
author_sort Maged, A.F.
title Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10
title_short Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10
title_full Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10
title_fullStr Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10
title_full_unstemmed Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10
title_sort thermoluminescence study of semiconductor materials sixte60−x as30ge10
publisher Springer Verlag (Germany)
publishDate 1992
url http://eprints.um.edu.my/12159/
http://link.springer.com/article/10.1007/BF00541618
http://dx.doi.org/10.1007/BF00541618
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score 13.211869

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