Thermoluminescence study of semiconductor materials SixTe60−x As30Ge10
The effect of gamma irradiation on SixTe60−xAs30Ge10, where x= 5, 12 and 20, has been studied using thermoluminescence (TL). As expected in semiconductor materials, both x=5 and 20 chalcogenides showed a wide TL peak ranging from ∼80–300 °C. However, these two materials also exhibited a sharp peak a...
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| 主要な著者: | , , |
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| フォーマット: | 論文 |
| 出版事項: |
Springer Verlag (Germany)
1992
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| オンライン･アクセス: | http://eprints.um.edu.my/12159/ http://link.springer.com/article/10.1007/BF00541618 http://dx.doi.org/10.1007/BF00541618 |
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