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Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri

The wide band gap semiconductor of zinc oxide (ZnO) has emerged as a potential material for the fabrication of a range of devices including opto-electronic devices such as light - emitting diodes (LEDs), laser diodes (LDs) and detectors. The goal of this research to achieve the photoresponse charact...

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Main Author: Masri, Mohd Nasron
Format: Thesis
Language:English
Published: 2010
Subjects:
Nanostructured materials
Apparatus and materials
Online Access:https://ir.uitm.edu.my/id/eprint/98844/1/98844.pdf
https://ir.uitm.edu.my/id/eprint/98844/
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spelling my.uitm.ir.988442024-08-18T03:15:07Z https://ir.uitm.edu.my/id/eprint/98844/ Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri Masri, Mohd Nasron Nanostructured materials Apparatus and materials The wide band gap semiconductor of zinc oxide (ZnO) has emerged as a potential material for the fabrication of a range of devices including opto-electronic devices such as light - emitting diodes (LEDs), laser diodes (LDs) and detectors. The goal of this research to achieve the photoresponse characteristic of Al doped ZnO thin films. The thin films of ZnO was doping with different Al concentration using sol-gel method. Dipcoating technique was applied to deposit the glass substrate dip into the ZnO solution. The thin films were dip five times and the preheating temperature at 200°C. All the dipping parameter was fixed and the molar concentration of Al were varies at 1at.%, 3at.%, 5at.%, 7at.% and 9at.%. The thin films were annealed for 1 hour before characterization process. The influence of doping concentration of aluminum on the surface morphologies was characterized by Scanning Electron Microscopy (SEM). The electrical properties of thin films were characterized using 2-probe Current-Voltage (I-V) measurement system (Advantest R6243). The optical properties were studied using UVVis-NIR spectrometer. The as prepared ZnO nanostructure thin films layers have a grain structure and show a comparably low photocurrent magnitude under dark to illumination. The results show that higher conductivity found under illumination. Al doping concentration proportional increased with electrical conductivity. 2010 Thesis NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/98844/1/98844.pdf Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri. (2010) Degree thesis, thesis, Universiti Teknologi MARA (UiTM). <http://terminalib.uitm.edu.my/98844.pdf>
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Nanostructured materials
Apparatus and materials
spellingShingle Nanostructured materials
Apparatus and materials
Masri, Mohd Nasron
Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
description The wide band gap semiconductor of zinc oxide (ZnO) has emerged as a potential material for the fabrication of a range of devices including opto-electronic devices such as light - emitting diodes (LEDs), laser diodes (LDs) and detectors. The goal of this research to achieve the photoresponse characteristic of Al doped ZnO thin films. The thin films of ZnO was doping with different Al concentration using sol-gel method. Dipcoating technique was applied to deposit the glass substrate dip into the ZnO solution. The thin films were dip five times and the preheating temperature at 200°C. All the dipping parameter was fixed and the molar concentration of Al were varies at 1at.%, 3at.%, 5at.%, 7at.% and 9at.%. The thin films were annealed for 1 hour before characterization process. The influence of doping concentration of aluminum on the surface morphologies was characterized by Scanning Electron Microscopy (SEM). The electrical properties of thin films were characterized using 2-probe Current-Voltage (I-V) measurement system (Advantest R6243). The optical properties were studied using UVVis-NIR spectrometer. The as prepared ZnO nanostructure thin films layers have a grain structure and show a comparably low photocurrent magnitude under dark to illumination. The results show that higher conductivity found under illumination. Al doping concentration proportional increased with electrical conductivity.
format Thesis
author Masri, Mohd Nasron
author_facet Masri, Mohd Nasron
author_sort Masri, Mohd Nasron
title Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
title_short Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
title_full Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
title_fullStr Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
title_full_unstemmed Photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / Mohd Nasron Masri
title_sort photoresponse characteristics of aluminium doped zinc oxide nanostructure thin films / mohd nasron masri
publishDate 2010
url https://ir.uitm.edu.my/id/eprint/98844/1/98844.pdf
https://ir.uitm.edu.my/id/eprint/98844/
_version_ 1808976051078955008
score 13.211869

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