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Influence of heat treatment on the properties of MgO thin films as dielectric layer / Habibah Z. ... [et al.]

Physical properties such as high melting point, low heat capacity and high bonding strength of magnesium oxide, MgO could be get give an advantage to MgO to be used as the dielectric layer. Besides that, MgO also has large band gap (7.8 eV) and high dielectric constant (9.8) could be potentially...

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Main Authors: Z., Habibah, L.N., Ismail, R.A., Bakar, M., Rusop
Format: Conference or Workshop Item
Language:English
Published: 2012
Subjects:
Heat
Dielectrics
Online Access:https://ir.uitm.edu.my/id/eprint/67074/1/67074.pdf
https://ir.uitm.edu.my/id/eprint/67074/
https://ieeexplore.ieee.org
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spelling my.uitm.ir.670742022-09-21T04:03:00Z https://ir.uitm.edu.my/id/eprint/67074/ Influence of heat treatment on the properties of MgO thin films as dielectric layer / Habibah Z. ... [et al.] Z., Habibah L.N., Ismail R.A., Bakar M., Rusop Heat Dielectrics Physical properties such as high melting point, low heat capacity and high bonding strength of magnesium oxide, MgO could be get give an advantage to MgO to be used as the dielectric layer. Besides that, MgO also has large band gap (7.8 eV) and high dielectric constant (9.8) could be potentially used as a buffer layer for ferroelectric material. In this work, MgO with 0.2M concentration were prepared using sol-gel technique. Magnesium acetate tetrahydrate, ethanol and nitric acid used as precursor, solvent and stabilizer respectively. The MgO solutions were then deposited on the cleaned glass by using spin-coating technique. The thin film deposition is repeated for 8 times for uniformity purpose. The electrical and dielectric properties of MgO are identified by observing its resistivity, dielectric constant, dielectric loss and its surface morphology in terms of annealing temperature. Since high deposition temperature is needed in order to obtain high quality of MgO films and also due to the limitation of glass, the annealing temperature is varied from 400°C to 500°C with 25°C interval. The experimental results show that annealing temperature is inversely proportional to the thickness of MgO films due to the merging activity of the particle. MgO film annealed at 500ºC has been chosen as a good dielectric layer since it has a good electrical, dielectric and structural properties. 2012 Conference or Workshop Item PeerReviewed text en https://ir.uitm.edu.my/id/eprint/67074/1/67074.pdf Influence of heat treatment on the properties of MgO thin films as dielectric layer / Habibah Z. ... [et al.]. (2012) In: 2011 IEEE Student Conference on Research and Development, 19-20 December 2011, Cyberjaya, Malaysia. (Submitted) https://ieeexplore.ieee.org
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Heat
Dielectrics
spellingShingle Heat
Dielectrics
Z., Habibah
L.N., Ismail
R.A., Bakar
M., Rusop
Influence of heat treatment on the properties of MgO thin films as dielectric layer / Habibah Z. ... [et al.]
description Physical properties such as high melting point, low heat capacity and high bonding strength of magnesium oxide, MgO could be get give an advantage to MgO to be used as the dielectric layer. Besides that, MgO also has large band gap (7.8 eV) and high dielectric constant (9.8) could be potentially used as a buffer layer for ferroelectric material. In this work, MgO with 0.2M concentration were prepared using sol-gel technique. Magnesium acetate tetrahydrate, ethanol and nitric acid used as precursor, solvent and stabilizer respectively. The MgO solutions were then deposited on the cleaned glass by using spin-coating technique. The thin film deposition is repeated for 8 times for uniformity purpose. The electrical and dielectric properties of MgO are identified by observing its resistivity, dielectric constant, dielectric loss and its surface morphology in terms of annealing temperature. Since high deposition temperature is needed in order to obtain high quality of MgO films and also due to the limitation of glass, the annealing temperature is varied from 400°C to 500°C with 25°C interval. The experimental results show that annealing temperature is inversely proportional to the thickness of MgO films due to the merging activity of the particle. MgO film annealed at 500ºC has been chosen as a good dielectric layer since it has a good electrical, dielectric and structural properties.
format Conference or Workshop Item
author Z., Habibah
L.N., Ismail
R.A., Bakar
M., Rusop
author_facet Z., Habibah
L.N., Ismail
R.A., Bakar
M., Rusop
author_sort Z., Habibah
title Influence of heat treatment on the properties of MgO thin films as dielectric layer / Habibah Z. ... [et al.]
title_short Influence of heat treatment on the properties of MgO thin films as dielectric layer / Habibah Z. ... [et al.]
title_full Influence of heat treatment on the properties of MgO thin films as dielectric layer / Habibah Z. ... [et al.]
title_fullStr Influence of heat treatment on the properties of MgO thin films as dielectric layer / Habibah Z. ... [et al.]
title_full_unstemmed Influence of heat treatment on the properties of MgO thin films as dielectric layer / Habibah Z. ... [et al.]
title_sort influence of heat treatment on the properties of mgo thin films as dielectric layer / habibah z. ... [et al.]
publishDate 2012
url https://ir.uitm.edu.my/id/eprint/67074/1/67074.pdf
https://ir.uitm.edu.my/id/eprint/67074/
https://ieeexplore.ieee.org
_version_ 1744651674185629696
score 13.244368

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