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Investigation of stress effect technology on electrical characteristics of 90nm CMOS devices / Hanim Hussin, Ahmad Sabirin Zoolfakar and Rosmalini Ab Kadir

The implementation of this research is to find a solution for CMOS devices problems related to hot carrier effect due to advanced technology node where the devices are scaled in nano-region. Stress effect or known as strained silicon technology is capable to increase performance of CMOS devices in t...

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Main Authors: Hussin, Hanim, Zoolfakar, Ahmad Sabirin, Ab Kadir, Rosmalini
Format: Research Reports
Language:English
Published: 2011
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Online Access:https://ir.uitm.edu.my/id/eprint/61681/1/61681.pdf
https://ir.uitm.edu.my/id/eprint/61681/
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spelling my.uitm.ir.616812023-06-15T02:36:33Z https://ir.uitm.edu.my/id/eprint/61681/ Investigation of stress effect technology on electrical characteristics of 90nm CMOS devices / Hanim Hussin, Ahmad Sabirin Zoolfakar and Rosmalini Ab Kadir Hussin, Hanim Zoolfakar, Ahmad Sabirin Ab Kadir, Rosmalini Indexes (General) The implementation of this research is to find a solution for CMOS devices problems related to hot carrier effect due to advanced technology node where the devices are scaled in nano-region. Stress effect or known as strained silicon technology is capable to increase performance of CMOS devices in terms of the mobility of electrons and holes. This can significantly increased the performance of integrated circuits whereby CMOS devices are widely used. Four fabrication methods are identified for the purpose of this research which consist of shallow trench isolation, silicide, silicon nitride capping layer and embedded silicon germanium effect. All this fabrication techniques will be implemented in simulation using SIL V ACO TCAD tool. The CMOS devices under study will be 90nm CMOS devices. The results will be in the formed of device structure from fabrication process and characterization of the stressed CMOS devices. 2011 Research Reports NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/61681/1/61681.pdf Investigation of stress effect technology on electrical characteristics of 90nm CMOS devices / Hanim Hussin, Ahmad Sabirin Zoolfakar and Rosmalini Ab Kadir. (2011) [Research Reports] (Submitted)
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Indexes (General)
spellingShingle Indexes (General)
Hussin, Hanim
Zoolfakar, Ahmad Sabirin
Ab Kadir, Rosmalini
Investigation of stress effect technology on electrical characteristics of 90nm CMOS devices / Hanim Hussin, Ahmad Sabirin Zoolfakar and Rosmalini Ab Kadir
description The implementation of this research is to find a solution for CMOS devices problems related to hot carrier effect due to advanced technology node where the devices are scaled in nano-region. Stress effect or known as strained silicon technology is capable to increase performance of CMOS devices in terms of the mobility of electrons and holes. This can significantly increased the performance of integrated circuits whereby CMOS devices are widely used. Four fabrication methods are identified for the purpose of this research which consist of shallow trench isolation, silicide, silicon nitride capping layer and embedded silicon germanium effect. All this fabrication techniques will be implemented in simulation using SIL V ACO TCAD tool. The CMOS devices under study will be 90nm CMOS devices. The results will be in the formed of device structure from fabrication process and characterization of the stressed CMOS devices.
format Research Reports
author Hussin, Hanim
Zoolfakar, Ahmad Sabirin
Ab Kadir, Rosmalini
author_facet Hussin, Hanim
Zoolfakar, Ahmad Sabirin
Ab Kadir, Rosmalini
author_sort Hussin, Hanim
title Investigation of stress effect technology on electrical characteristics of 90nm CMOS devices / Hanim Hussin, Ahmad Sabirin Zoolfakar and Rosmalini Ab Kadir
title_short Investigation of stress effect technology on electrical characteristics of 90nm CMOS devices / Hanim Hussin, Ahmad Sabirin Zoolfakar and Rosmalini Ab Kadir
title_full Investigation of stress effect technology on electrical characteristics of 90nm CMOS devices / Hanim Hussin, Ahmad Sabirin Zoolfakar and Rosmalini Ab Kadir
title_fullStr Investigation of stress effect technology on electrical characteristics of 90nm CMOS devices / Hanim Hussin, Ahmad Sabirin Zoolfakar and Rosmalini Ab Kadir
title_full_unstemmed Investigation of stress effect technology on electrical characteristics of 90nm CMOS devices / Hanim Hussin, Ahmad Sabirin Zoolfakar and Rosmalini Ab Kadir
title_sort investigation of stress effect technology on electrical characteristics of 90nm cmos devices / hanim hussin, ahmad sabirin zoolfakar and rosmalini ab kadir
publishDate 2011
url https://ir.uitm.edu.my/id/eprint/61681/1/61681.pdf
https://ir.uitm.edu.my/id/eprint/61681/
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score 13.211869

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