Fabrication and characterization of porous Si and porous GaN by integrated pulse electrochemical etching for potential optoelectronic application / Nurul Syuhadah Mohd Razali

A great limitation in producing porous structure on semiconductor surfaces is due to the lack of reliable techniques for fabrication of uniform pore morphology. In the current technique of direct current electrochemical etching (DCPEC), the challenge is in controlling the etching parameters to obtai...

Full description

Saved in:
Bibliographic Details
Main Author: Mohd Razali, Nurul Syuhadah
Format: Thesis
Language:English
Published: 2021
Subjects:
Online Access:https://ir.uitm.edu.my/id/eprint/60614/1/60614.pdf
https://ir.uitm.edu.my/id/eprint/60614/
Tags: Add Tag
No Tags, Be the first to tag this record!

Similar Items