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Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim

In this project, the hole mobility enhancement of PMOS are studied using SiGe technology. Silicon Germanium (SiGe) are used to increase drive current or hole mobility in the drain and source region. The performance improvements of devices with a gate length of 0.9 urn, 0.8 \im and 0.7 \im were consi...

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Main Authors: Zoolfakar, Ahmad Sabirin, Hashim, Hashimah
Format: Research Reports
Language:English
Published: 2009
Subjects:
Electricity
Electric apparatus and materials. Electric circuits. Electric networks
Online Access:https://ir.uitm.edu.my/id/eprint/47700/1/47700.pdf
https://ir.uitm.edu.my/id/eprint/47700/
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id my.uitm.ir.47700
record_format eprints
spelling my.uitm.ir.477002022-07-06T03:02:12Z https://ir.uitm.edu.my/id/eprint/47700/ Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim Zoolfakar, Ahmad Sabirin Hashim, Hashimah Electricity Electric apparatus and materials. Electric circuits. Electric networks In this project, the hole mobility enhancement of PMOS are studied using SiGe technology. Silicon Germanium (SiGe) are used to increase drive current or hole mobility in the drain and source region. The performance improvements of devices with a gate length of 0.9 urn, 0.8 \im and 0.7 \im were considered. The first part of this project is reviewed about the effect of using SiGe in PMOS process to calculate the mobility. 100% of mobility enhancement using SiGe was observed compared to conventional PMOS SiGe. The second part covers the characteristics for variation of SiGe thickness. Therefore, using SiGe is an efficient method for improving PMOS device performance. 2009 Research Reports NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/47700/1/47700.pdf Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim. (2009) [Research Reports] (Unpublished)
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Electricity
Electric apparatus and materials. Electric circuits. Electric networks
spellingShingle Electricity
Electric apparatus and materials. Electric circuits. Electric networks
Zoolfakar, Ahmad Sabirin
Hashim, Hashimah
Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim
description In this project, the hole mobility enhancement of PMOS are studied using SiGe technology. Silicon Germanium (SiGe) are used to increase drive current or hole mobility in the drain and source region. The performance improvements of devices with a gate length of 0.9 urn, 0.8 \im and 0.7 \im were considered. The first part of this project is reviewed about the effect of using SiGe in PMOS process to calculate the mobility. 100% of mobility enhancement using SiGe was observed compared to conventional PMOS SiGe. The second part covers the characteristics for variation of SiGe thickness. Therefore, using SiGe is an efficient method for improving PMOS device performance.
format Research Reports
author Zoolfakar, Ahmad Sabirin
Hashim, Hashimah
author_facet Zoolfakar, Ahmad Sabirin
Hashim, Hashimah
author_sort Zoolfakar, Ahmad Sabirin
title Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim
title_short Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim
title_full Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim
title_fullStr Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim
title_full_unstemmed Holes mobility enhancement using strained silicon, SiGe technology / Ahmad Sabirin Zoolfakar and Hashimah Hashim
title_sort holes mobility enhancement using strained silicon, sige technology / ahmad sabirin zoolfakar and hashimah hashim
publishDate 2009
url https://ir.uitm.edu.my/id/eprint/47700/1/47700.pdf
https://ir.uitm.edu.my/id/eprint/47700/
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score 13.211869

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