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A comparative study for various structures of the P-N junction on silicon (100) wafer / Mohd Ghasani Mohd Maimi.

This project is to investigate the fabrication of p-n junction by using three different structures on silicon (100) wafer. A semiconductor diode is basically by made silicon material that has impurities added to it. This is to create a region on one side that contains negative charge carriers (elect...

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Main Author: Mohd Maimi, Mohd Ghasani
Format: Student Project
Language:English
Published: 2011
Subjects:
Descriptive and experimental mechanics
Composite materials
Online Access:https://ir.uitm.edu.my/id/eprint/46750/1/46750.pdf
https://ir.uitm.edu.my/id/eprint/46750/
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spelling my.uitm.ir.467502022-11-09T03:24:34Z https://ir.uitm.edu.my/id/eprint/46750/ A comparative study for various structures of the P-N junction on silicon (100) wafer / Mohd Ghasani Mohd Maimi. Mohd Maimi, Mohd Ghasani Descriptive and experimental mechanics Composite materials This project is to investigate the fabrication of p-n junction by using three different structures on silicon (100) wafer. A semiconductor diode is basically by made silicon material that has impurities added to it. This is to create a region on one side that contains negative charge carriers (electrons), known as n-type semiconductor, and a region on the other side that contains positive charge carriers (holes), known as p-type semiconductor. The junction's terminal attached to each region. In this project, various structures are used to compare the p-n junction characteristics and behavior for each of them. The n-type silicon wafer with orientation of (100) is used to fabricate the junction. For the impurity to obtain p-type junction, Boron dopant is used in order to produce it. This project is important to investigate the method of fabrication by using different structures of p-n junction. The fabrication process included in this project is basic fabrication process but in this project, it will concentrate on different design of the structure part. 3 sets of designed masked is needed for this project created by using Turbocad software system. The instrument that would be used during the fabrication process are wet cleaning, oxidation, photolithography, pattern transfer, wet etching, spin on dopant, diffusion and metal deposition. For the characterization part, the 4 point probe and I-V measurement would be used to obtain the electrical characteristics of the junction. 2011 Student Project NonPeerReviewed text en https://ir.uitm.edu.my/id/eprint/46750/1/46750.pdf A comparative study for various structures of the P-N junction on silicon (100) wafer / Mohd Ghasani Mohd Maimi. (2011) [Student Project] (Unpublished)
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Descriptive and experimental mechanics
Composite materials
spellingShingle Descriptive and experimental mechanics
Composite materials
Mohd Maimi, Mohd Ghasani
A comparative study for various structures of the P-N junction on silicon (100) wafer / Mohd Ghasani Mohd Maimi.
description This project is to investigate the fabrication of p-n junction by using three different structures on silicon (100) wafer. A semiconductor diode is basically by made silicon material that has impurities added to it. This is to create a region on one side that contains negative charge carriers (electrons), known as n-type semiconductor, and a region on the other side that contains positive charge carriers (holes), known as p-type semiconductor. The junction's terminal attached to each region. In this project, various structures are used to compare the p-n junction characteristics and behavior for each of them. The n-type silicon wafer with orientation of (100) is used to fabricate the junction. For the impurity to obtain p-type junction, Boron dopant is used in order to produce it. This project is important to investigate the method of fabrication by using different structures of p-n junction. The fabrication process included in this project is basic fabrication process but in this project, it will concentrate on different design of the structure part. 3 sets of designed masked is needed for this project created by using Turbocad software system. The instrument that would be used during the fabrication process are wet cleaning, oxidation, photolithography, pattern transfer, wet etching, spin on dopant, diffusion and metal deposition. For the characterization part, the 4 point probe and I-V measurement would be used to obtain the electrical characteristics of the junction.
format Student Project
author Mohd Maimi, Mohd Ghasani
author_facet Mohd Maimi, Mohd Ghasani
author_sort Mohd Maimi, Mohd Ghasani
title A comparative study for various structures of the P-N junction on silicon (100) wafer / Mohd Ghasani Mohd Maimi.
title_short A comparative study for various structures of the P-N junction on silicon (100) wafer / Mohd Ghasani Mohd Maimi.
title_full A comparative study for various structures of the P-N junction on silicon (100) wafer / Mohd Ghasani Mohd Maimi.
title_fullStr A comparative study for various structures of the P-N junction on silicon (100) wafer / Mohd Ghasani Mohd Maimi.
title_full_unstemmed A comparative study for various structures of the P-N junction on silicon (100) wafer / Mohd Ghasani Mohd Maimi.
title_sort comparative study for various structures of the p-n junction on silicon (100) wafer / mohd ghasani mohd maimi.
publishDate 2011
url https://ir.uitm.edu.my/id/eprint/46750/1/46750.pdf
https://ir.uitm.edu.my/id/eprint/46750/
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score 13.211869

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