Temperature dependency in the preparation of silicon oxide (Si0₂) layer / Suazlina Mohd Ali
In the fabrication of silicon-based devices, the oxidation process is one of the most important stages since the thickness of the oxide layer is very accountable in determining the quality of the devices. Many publications have discussed the properties and applications of silicon (Si) which were inv...
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| Format: | Student Project |
| Language: | English |
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2011
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| Online Access: | https://ir.uitm.edu.my/id/eprint/45486/1/45486.pdf https://ir.uitm.edu.my/id/eprint/45486/ |
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