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Electrical and material characterization of 0.24 micron CMOS device by using simulation / Nazirah Mohamat Kasim, Ahmad Puad Ismail and Rosfariza Radzali

This project is to simulate and analyze the electrical characteristics for 0.24 micron CMOS device using SILVACO TCAD. The objective of the project is basically to simulate the fabrication process and electrical characterization for 0.24 micron CMOS devices. Electrical characteristics were carried o...

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Main Authors: Kasim, Nazirah Mohamat, Ismail, Ahmad Puad, Radzali, Rosfariza
Format: Research Reports
Language:English
Published: 2009
Subjects:
Electronics
Microelectromechanical systems
Photoelectronic devices (General)
Online Access:http://ir.uitm.edu.my/id/eprint/42010/1/42010.PDF
http://ir.uitm.edu.my/id/eprint/42010/
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spelling my.uitm.ir.420102021-02-18T08:26:25Z http://ir.uitm.edu.my/id/eprint/42010/ Electrical and material characterization of 0.24 micron CMOS device by using simulation / Nazirah Mohamat Kasim, Ahmad Puad Ismail and Rosfariza Radzali Kasim, Nazirah Mohamat Ismail, Ahmad Puad Radzali, Rosfariza Electronics Microelectromechanical systems Photoelectronic devices (General) This project is to simulate and analyze the electrical characteristics for 0.24 micron CMOS device using SILVACO TCAD. The objective of the project is basically to simulate the fabrication process and electrical characterization for 0.24 micron CMOS devices. Electrical characteristics were carried out by using Atlas simulator while, simulation of the process is carried out by using Athena process simulator to modify theoretical values and obtain more accurate process parameters. At the device simulation process, the electrical parameter was extracted to investigate the device characteristics. Several design analysis are performed to investigate the effectiveness of the advanced method in order to prevent the varying of threshold voltage. The electrical characteristics produces the graph of drain current versus drain voltage, ID-VD and drain current versus gate voltage, ID-VQ. From ID-VG can be obtained the threshold voltage, VT where VT for NMOS transistor is lower than VT for PMOS transistor which is 0.6695V and -0.9683 V respectively. The gate length, LG obtained from the simulated for NMOS and PMOS are same which is 0.235 micron and it is nearest to the scale for the project can be obtained. 2009-04 Research Reports NonPeerReviewed text en http://ir.uitm.edu.my/id/eprint/42010/1/42010.PDF Kasim, Nazirah Mohamat and Ismail, Ahmad Puad and Radzali, Rosfariza (2009) Electrical and material characterization of 0.24 micron CMOS device by using simulation / Nazirah Mohamat Kasim, Ahmad Puad Ismail and Rosfariza Radzali. [Research Reports] (Unpublished)
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Electronics
Microelectromechanical systems
Photoelectronic devices (General)
spellingShingle Electronics
Microelectromechanical systems
Photoelectronic devices (General)
Kasim, Nazirah Mohamat
Ismail, Ahmad Puad
Radzali, Rosfariza
Electrical and material characterization of 0.24 micron CMOS device by using simulation / Nazirah Mohamat Kasim, Ahmad Puad Ismail and Rosfariza Radzali
description This project is to simulate and analyze the electrical characteristics for 0.24 micron CMOS device using SILVACO TCAD. The objective of the project is basically to simulate the fabrication process and electrical characterization for 0.24 micron CMOS devices. Electrical characteristics were carried out by using Atlas simulator while, simulation of the process is carried out by using Athena process simulator to modify theoretical values and obtain more accurate process parameters. At the device simulation process, the electrical parameter was extracted to investigate the device characteristics. Several design analysis are performed to investigate the effectiveness of the advanced method in order to prevent the varying of threshold voltage. The electrical characteristics produces the graph of drain current versus drain voltage, ID-VD and drain current versus gate voltage, ID-VQ. From ID-VG can be obtained the threshold voltage, VT where VT for NMOS transistor is lower than VT for PMOS transistor which is 0.6695V and -0.9683 V respectively. The gate length, LG obtained from the simulated for NMOS and PMOS are same which is 0.235 micron and it is nearest to the scale for the project can be obtained.
format Research Reports
author Kasim, Nazirah Mohamat
Ismail, Ahmad Puad
Radzali, Rosfariza
author_facet Kasim, Nazirah Mohamat
Ismail, Ahmad Puad
Radzali, Rosfariza
author_sort Kasim, Nazirah Mohamat
title Electrical and material characterization of 0.24 micron CMOS device by using simulation / Nazirah Mohamat Kasim, Ahmad Puad Ismail and Rosfariza Radzali
title_short Electrical and material characterization of 0.24 micron CMOS device by using simulation / Nazirah Mohamat Kasim, Ahmad Puad Ismail and Rosfariza Radzali
title_full Electrical and material characterization of 0.24 micron CMOS device by using simulation / Nazirah Mohamat Kasim, Ahmad Puad Ismail and Rosfariza Radzali
title_fullStr Electrical and material characterization of 0.24 micron CMOS device by using simulation / Nazirah Mohamat Kasim, Ahmad Puad Ismail and Rosfariza Radzali
title_full_unstemmed Electrical and material characterization of 0.24 micron CMOS device by using simulation / Nazirah Mohamat Kasim, Ahmad Puad Ismail and Rosfariza Radzali
title_sort electrical and material characterization of 0.24 micron cmos device by using simulation / nazirah mohamat kasim, ahmad puad ismail and rosfariza radzali
publishDate 2009
url http://ir.uitm.edu.my/id/eprint/42010/1/42010.PDF
http://ir.uitm.edu.my/id/eprint/42010/
_version_ 1692994661331763200
score 13.211869

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