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Fabrication and varification of porous silicon nanostructures/ zinc oxide nanostructures as a capacitive chemical sensors by electrochemical impedance method / Mohd Husairi Fadzilah Suhaimi

In this study, preparation and optimization of ZnO nanostructures on PSiNs for chemical sensor was studied. The PSiNs was prepared by electrochemical etching using p-type, [100] orientation silicon wafer as a based material. The PSiNs samples were prepared by the electrochemical etching with photoas...

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Main Author: Fadzilah Suhaimi, Mohd Husairi
Format: Book Section
Language:English
Published: Institute of Graduate Studies, UiTM 2015
Subjects:
Malaysia
Online Access:https://ir.uitm.edu.my/id/eprint/19503/6/19503.pdf
https://ir.uitm.edu.my/id/eprint/19503/
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spelling my.uitm.ir.195032022-12-23T08:00:43Z https://ir.uitm.edu.my/id/eprint/19503/ Fabrication and varification of porous silicon nanostructures/ zinc oxide nanostructures as a capacitive chemical sensors by electrochemical impedance method / Mohd Husairi Fadzilah Suhaimi Fadzilah Suhaimi, Mohd Husairi Malaysia In this study, preparation and optimization of ZnO nanostructures on PSiNs for chemical sensor was studied. The PSiNs was prepared by electrochemical etching using p-type, [100] orientation silicon wafer as a based material. The PSiNs samples were prepared by the electrochemical etching with photoassisted at different current density in the range of 15–40 mA/ cm² and etching time at 10–50 minutes. Photoluminescence spectra show blue shift with increasing applied current density that is attributed by PSiNs pillar size. Variations of electrical resistance and capacitance values of PSiNs were measured using EIS. These results indicate that PSiNs prepared at 20 mA/cm² current density and 30 minutes have uniform porous structures with a large demsity of pillars. Furthermore, PSiNs structure influences large values of charge transfer resistance and double layer capacitance, indicating potential application in sensors. The ZnO nanostructures were synthesized on PSiNs substrates using thermal catalytic-free immersion method with Zn(NO₃)₂6H₂O as a precursor and CH₄N₂O as a stabilizers. Three parameters was used to optimized the maximum changes of capacitance on ZnO nanostructures on PSiNs, solution concentration (0.1, 0.2 and 0.3 molar), molarity of CH4N2O (0.05, 0.1, 0.2, 0.4 and 0.6 molar) and immersion time (2, 4, 6, 8 and 10 hour)… Institute of Graduate Studies, UiTM 2015 Book Section PeerReviewed text en https://ir.uitm.edu.my/id/eprint/19503/6/19503.pdf Fabrication and varification of porous silicon nanostructures/ zinc oxide nanostructures as a capacitive chemical sensors by electrochemical impedance method / Mohd Husairi Fadzilah Suhaimi. (2015) In: The Doctoral Research Abstracts. IGS Biannual Publication, 8 (8). Institute of Graduate Studies, UiTM, Shah Alam.
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
topic Malaysia
spellingShingle Malaysia
Fadzilah Suhaimi, Mohd Husairi
Fabrication and varification of porous silicon nanostructures/ zinc oxide nanostructures as a capacitive chemical sensors by electrochemical impedance method / Mohd Husairi Fadzilah Suhaimi
description In this study, preparation and optimization of ZnO nanostructures on PSiNs for chemical sensor was studied. The PSiNs was prepared by electrochemical etching using p-type, [100] orientation silicon wafer as a based material. The PSiNs samples were prepared by the electrochemical etching with photoassisted at different current density in the range of 15–40 mA/ cm² and etching time at 10–50 minutes. Photoluminescence spectra show blue shift with increasing applied current density that is attributed by PSiNs pillar size. Variations of electrical resistance and capacitance values of PSiNs were measured using EIS. These results indicate that PSiNs prepared at 20 mA/cm² current density and 30 minutes have uniform porous structures with a large demsity of pillars. Furthermore, PSiNs structure influences large values of charge transfer resistance and double layer capacitance, indicating potential application in sensors. The ZnO nanostructures were synthesized on PSiNs substrates using thermal catalytic-free immersion method with Zn(NO₃)₂6H₂O as a precursor and CH₄N₂O as a stabilizers. Three parameters was used to optimized the maximum changes of capacitance on ZnO nanostructures on PSiNs, solution concentration (0.1, 0.2 and 0.3 molar), molarity of CH4N2O (0.05, 0.1, 0.2, 0.4 and 0.6 molar) and immersion time (2, 4, 6, 8 and 10 hour)…
format Book Section
author Fadzilah Suhaimi, Mohd Husairi
author_facet Fadzilah Suhaimi, Mohd Husairi
author_sort Fadzilah Suhaimi, Mohd Husairi
title Fabrication and varification of porous silicon nanostructures/ zinc oxide nanostructures as a capacitive chemical sensors by electrochemical impedance method / Mohd Husairi Fadzilah Suhaimi
title_short Fabrication and varification of porous silicon nanostructures/ zinc oxide nanostructures as a capacitive chemical sensors by electrochemical impedance method / Mohd Husairi Fadzilah Suhaimi
title_full Fabrication and varification of porous silicon nanostructures/ zinc oxide nanostructures as a capacitive chemical sensors by electrochemical impedance method / Mohd Husairi Fadzilah Suhaimi
title_fullStr Fabrication and varification of porous silicon nanostructures/ zinc oxide nanostructures as a capacitive chemical sensors by electrochemical impedance method / Mohd Husairi Fadzilah Suhaimi
title_full_unstemmed Fabrication and varification of porous silicon nanostructures/ zinc oxide nanostructures as a capacitive chemical sensors by electrochemical impedance method / Mohd Husairi Fadzilah Suhaimi
title_sort fabrication and varification of porous silicon nanostructures/ zinc oxide nanostructures as a capacitive chemical sensors by electrochemical impedance method / mohd husairi fadzilah suhaimi
publisher Institute of Graduate Studies, UiTM
publishDate 2015
url https://ir.uitm.edu.my/id/eprint/19503/6/19503.pdf
https://ir.uitm.edu.my/id/eprint/19503/
_version_ 1753791809634435072
score 13.211869

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