Cover Image

Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail

Simulation and analyzing the electrical characteristics of 0.24 micron CMOS device was done by using Silvaco TCAD. Electrical characteristics were carried out by using Atlas device simulator, while for simulation the process was carried out by using Athena process simulator to modify theoretical val...

Full description

Saved in:
Bibliographic Details
Main Authors: Mohamat Kasim, Nazirah, Radzali, Rosfariza, Ismail, Ahmad Puad
Format: Article
Language:English
Published: Universiti Teknologi MARA, Pulau Pinang & Pusat Penerbitan Universiti (UPENA) 2010
Online Access:http://ir.uitm.edu.my/id/eprint/16338/1/AJ_NAZIRAH%20MOHAMAT%20KASIM%20ESTEEM%2010.pdf
http://ir.uitm.edu.my/id/eprint/16338/
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.uitm.ir.16338
record_format eprints
spelling my.uitm.ir.163382019-11-15T02:23:22Z http://ir.uitm.edu.my/id/eprint/16338/ Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail Mohamat Kasim, Nazirah Radzali, Rosfariza Ismail, Ahmad Puad Simulation and analyzing the electrical characteristics of 0.24 micron CMOS device was done by using Silvaco TCAD. Electrical characteristics were carried out by using Atlas device simulator, while for simulation the process was carried out by using Athena process simulator to modify theoretical values and obtain more accurate process parameters. The electrical parameter was extracted to investigate the device characteristics. Several design analyses were performed to investigate the effectiveness of the advanced method in order to prevent the varying of threshold voltage. The electrical characteristics produce the graph of drain current versus drain voltage, lD-VG and drain current versus gate voltage, lD-VG . From lD-VG can be obtained the threshold voltage, VT in which VT for NMOS transistor is lower than VT for PMOS transistor which is 0.6695V and -0.9683 V respectively. The gate length LG obtained from the simulation for NMOS and PMOS is the same which is 0.235 micron and it is nearest to the scale for this research work. Universiti Teknologi MARA, Pulau Pinang & Pusat Penerbitan Universiti (UPENA) 2010 Article PeerReviewed text en http://ir.uitm.edu.my/id/eprint/16338/1/AJ_NAZIRAH%20MOHAMAT%20KASIM%20ESTEEM%2010.pdf Mohamat Kasim, Nazirah and Radzali, Rosfariza and Ismail, Ahmad Puad (2010) Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail. Esteem Academic Journal, 6 (1). pp. 73-83. ISSN 1675-7939
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
description Simulation and analyzing the electrical characteristics of 0.24 micron CMOS device was done by using Silvaco TCAD. Electrical characteristics were carried out by using Atlas device simulator, while for simulation the process was carried out by using Athena process simulator to modify theoretical values and obtain more accurate process parameters. The electrical parameter was extracted to investigate the device characteristics. Several design analyses were performed to investigate the effectiveness of the advanced method in order to prevent the varying of threshold voltage. The electrical characteristics produce the graph of drain current versus drain voltage, lD-VG and drain current versus gate voltage, lD-VG . From lD-VG can be obtained the threshold voltage, VT in which VT for NMOS transistor is lower than VT for PMOS transistor which is 0.6695V and -0.9683 V respectively. The gate length LG obtained from the simulation for NMOS and PMOS is the same which is 0.235 micron and it is nearest to the scale for this research work.
format Article
author Mohamat Kasim, Nazirah
Radzali, Rosfariza
Ismail, Ahmad Puad
spellingShingle Mohamat Kasim, Nazirah
Radzali, Rosfariza
Ismail, Ahmad Puad
Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
author_facet Mohamat Kasim, Nazirah
Radzali, Rosfariza
Ismail, Ahmad Puad
author_sort Mohamat Kasim, Nazirah
title Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
title_short Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
title_full Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
title_fullStr Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
title_full_unstemmed Fabrication and characterization of 0.24 Micron CMOS device by using simulation / Nazirah Mohamat Kasim, Rosfariza Radzali and Ahmad Puad Ismail
title_sort fabrication and characterization of 0.24 micron cmos device by using simulation / nazirah mohamat kasim, rosfariza radzali and ahmad puad ismail
publisher Universiti Teknologi MARA, Pulau Pinang & Pusat Penerbitan Universiti (UPENA)
publishDate 2010
url http://ir.uitm.edu.my/id/eprint/16338/1/AJ_NAZIRAH%20MOHAMAT%20KASIM%20ESTEEM%2010.pdf
http://ir.uitm.edu.my/id/eprint/16338/
_version_ 1685648787492569088
score 13.211869

Similar Items