Staff View: The characterization of nanostructured GaN prepared via low temperature photoelectrochemical etching at different etching period / Nur Iwani Nor Izaham ... [et al.]

The characterization of nanostructured GaN prepared via low temperature photoelectrochemical etching at different etching period / Nur Iwani Nor Izaham ... [et al.]

This study investigates the nanostructured GaN prepared via low temperature direct current photoelectrochemical (DCPEC) etching with varying etching durations of 40 min and 55 min. One of the key challenges in optimizing DCPEC is managing the system's thermal stability. Operating at low tempera...

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Main Authors:	Nor Izaham, Nur Iwani, Mahmood, Ainorkhilah, Abd Rahim, Alhan Farhanah, Mukhtar, Nur Maizatul Azra, Johan Ooi, Mahayatun Dayana, Ahmed, Naser Mahmoud
Format:	Article
Language:	English
Published:	UiTM Press 2024
Subjects:	Photochemistry Carbon nanotubes. Nanoparticles. Nanostructured materials
Online Access:	https://ir.uitm.edu.my/id/eprint/105788/1/105788.pdf https://ir.uitm.edu.my/id/eprint/105788/
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spelling	my.uitm.ir.1057882024-11-07T02:47:02Z https://ir.uitm.edu.my/id/eprint/105788/ The characterization of nanostructured GaN prepared via low temperature photoelectrochemical etching at different etching period / Nur Iwani Nor Izaham ... [et al.] jeesr Nor Izaham, Nur Iwani Mahmood, Ainorkhilah Abd Rahim, Alhan Farhanah Mukhtar, Nur Maizatul Azra Johan Ooi, Mahayatun Dayana Ahmed, Naser Mahmoud Photochemistry Carbon nanotubes. Nanoparticles. Nanostructured materials This study investigates the nanostructured GaN prepared via low temperature direct current photoelectrochemical (DCPEC) etching with varying etching durations of 40 min and 55 min. One of the key challenges in optimizing DCPEC is managing the system's thermal stability. Operating at low temperatures is crucial to avoid the excessive heat transfer from the light source, which poses the risk of electrolyte vaporization. Such vaporization can disrupt the delicate balance of the DCPEC process, potentially leading to system instability, inefficient etching, or even failure. This work obtained substantial structural and optical characteristics of nanostructured GaN samples compared to as grown sample. This study ultilized 4% potassium hydroxide (KOH) electrolyte, 30 mA direct current (DC), and 100 W of ultraviolet (UV) light. The FESEM micrographs revealed that the pores have hexagonal shape and ridged structure. The nanostructured samples displayed a significant increase in photoluminescence (PL) intensity and a shift towards longer wavelengths in the band edge PL peaks, which can be attributed to the release of compressive stress. The Full with Half Minimum (FWHM) of the 40 min sample has the lowest value compared to the as grown and 55 min samples for symmetry omega scan, indicating a better crystalline quality of the sample. UiTM Press 2024-10 Article PeerReviewed text en https://ir.uitm.edu.my/id/eprint/105788/1/105788.pdf The characterization of nanostructured GaN prepared via low temperature photoelectrochemical etching at different etching period / Nur Iwani Nor Izaham ... [et al.]. (2024) Journal of Electrical and Electronic Systems Research (JEESR) <https://ir.uitm.edu.my/view/publication/Journal_of_Electrical_and_Electronic_Systems_Research_=28JEESR=29/>, 25 (1): 12. pp. 108-112. ISSN 1985-5389
institution	Universiti Teknologi Mara
building	Tun Abdul Razak Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Mara
content_source	UiTM Institutional Repository
url_provider	http://ir.uitm.edu.my/
language	English
topic	Photochemistry Carbon nanotubes. Nanoparticles. Nanostructured materials
spellingShingle	Photochemistry Carbon nanotubes. Nanoparticles. Nanostructured materials Nor Izaham, Nur Iwani Mahmood, Ainorkhilah Abd Rahim, Alhan Farhanah Mukhtar, Nur Maizatul Azra Johan Ooi, Mahayatun Dayana Ahmed, Naser Mahmoud The characterization of nanostructured GaN prepared via low temperature photoelectrochemical etching at different etching period / Nur Iwani Nor Izaham ... [et al.]
description	This study investigates the nanostructured GaN prepared via low temperature direct current photoelectrochemical (DCPEC) etching with varying etching durations of 40 min and 55 min. One of the key challenges in optimizing DCPEC is managing the system's thermal stability. Operating at low temperatures is crucial to avoid the excessive heat transfer from the light source, which poses the risk of electrolyte vaporization. Such vaporization can disrupt the delicate balance of the DCPEC process, potentially leading to system instability, inefficient etching, or even failure. This work obtained substantial structural and optical characteristics of nanostructured GaN samples compared to as grown sample. This study ultilized 4% potassium hydroxide (KOH) electrolyte, 30 mA direct current (DC), and 100 W of ultraviolet (UV) light. The FESEM micrographs revealed that the pores have hexagonal shape and ridged structure. The nanostructured samples displayed a significant increase in photoluminescence (PL) intensity and a shift towards longer wavelengths in the band edge PL peaks, which can be attributed to the release of compressive stress. The Full with Half Minimum (FWHM) of the 40 min sample has the lowest value compared to the as grown and 55 min samples for symmetry omega scan, indicating a better crystalline quality of the sample.
format	Article
author	Nor Izaham, Nur Iwani Mahmood, Ainorkhilah Abd Rahim, Alhan Farhanah Mukhtar, Nur Maizatul Azra Johan Ooi, Mahayatun Dayana Ahmed, Naser Mahmoud
author_facet	Nor Izaham, Nur Iwani Mahmood, Ainorkhilah Abd Rahim, Alhan Farhanah Mukhtar, Nur Maizatul Azra Johan Ooi, Mahayatun Dayana Ahmed, Naser Mahmoud
author_sort	Nor Izaham, Nur Iwani
title	The characterization of nanostructured GaN prepared via low temperature photoelectrochemical etching at different etching period / Nur Iwani Nor Izaham ... [et al.]
title_short	The characterization of nanostructured GaN prepared via low temperature photoelectrochemical etching at different etching period / Nur Iwani Nor Izaham ... [et al.]
title_full	The characterization of nanostructured GaN prepared via low temperature photoelectrochemical etching at different etching period / Nur Iwani Nor Izaham ... [et al.]
title_fullStr	The characterization of nanostructured GaN prepared via low temperature photoelectrochemical etching at different etching period / Nur Iwani Nor Izaham ... [et al.]
title_full_unstemmed	The characterization of nanostructured GaN prepared via low temperature photoelectrochemical etching at different etching period / Nur Iwani Nor Izaham ... [et al.]
title_sort	characterization of nanostructured gan prepared via low temperature photoelectrochemical etching at different etching period / nur iwani nor izaham ... [et al.]
publisher	UiTM Press
publishDate	2024
url	https://ir.uitm.edu.my/id/eprint/105788/1/105788.pdf https://ir.uitm.edu.my/id/eprint/105788/
_version_	1817847103433474048
score	13.222552

The characterization of nanostructured GaN prepared via low temperature photoelectrochemical etching at different etching period / Nur Iwani Nor Izaham ... [et al.]

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