Photoconductivity study of TiO2 thin films annealed in oxygen ambient: article / Anis Ataillah Ismail
The TiO2 thin films have been prepared on microscope glass substrate using sol-gel dip coating method annealed at different oxygen flow rate from 0 to 2.3 l/min. The thin films were characterized using Current–Voltage (I–V) measurement, UV–Vis-NIR spectrophotometer and SEM. UV–Vis-NIR spectra reveal...
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my.uitm.ir.1053222024-11-02T01:50:28Z https://ir.uitm.edu.my/id/eprint/105322/ Photoconductivity study of TiO2 thin films annealed in oxygen ambient: article / Anis Ataillah Ismail Ismail, Anis Ataillah Electric heating. Resistance heating The TiO2 thin films have been prepared on microscope glass substrate using sol-gel dip coating method annealed at different oxygen flow rate from 0 to 2.3 l/min. The thin films were characterized using Current–Voltage (I–V) measurement, UV–Vis-NIR spectrophotometer and SEM. UV–Vis-NIR spectra reveals all films exhibit high transmission (>60%) in UV-NIR region. From I-V measurement result, the electrical properties were studied in dark and under illumination as a function of oxygen flow rate. Introduction of oxygen in TiO2 based coatings induces an increase of their electrical resistivity. The reduction of TiO2 thin film’s hardness with increase of the oxygen flow rate is discussed based on film structure that shown by SEM. 2010 Article PeerReviewed text en https://ir.uitm.edu.my/id/eprint/105322/1/105322.pdf Photoconductivity study of TiO2 thin films annealed in oxygen ambient: article / Anis Ataillah Ismail. (2010) pp. 1-6. |
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Electric heating. Resistance heating Ismail, Anis Ataillah Photoconductivity study of TiO2 thin films annealed in oxygen ambient: article / Anis Ataillah Ismail |
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The TiO2 thin films have been prepared on microscope glass substrate using sol-gel dip coating method annealed at different oxygen flow rate from 0 to 2.3 l/min. The thin films were characterized using Current–Voltage (I–V) measurement, UV–Vis-NIR spectrophotometer and SEM. UV–Vis-NIR spectra reveals all films exhibit high transmission (>60%) in UV-NIR region. From I-V measurement result, the electrical properties were studied in dark and under illumination as a function of oxygen flow rate. Introduction of oxygen in TiO2 based coatings induces an increase of their electrical resistivity. The reduction of TiO2 thin film’s hardness with increase of the oxygen flow rate is discussed based on film structure that shown by SEM. |
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Article |
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Ismail, Anis Ataillah |
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Ismail, Anis Ataillah |
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Ismail, Anis Ataillah |
title |
Photoconductivity study of TiO2 thin films annealed in oxygen ambient: article / Anis Ataillah Ismail |
title_short |
Photoconductivity study of TiO2 thin films annealed in oxygen ambient: article / Anis Ataillah Ismail |
title_full |
Photoconductivity study of TiO2 thin films annealed in oxygen ambient: article / Anis Ataillah Ismail |
title_fullStr |
Photoconductivity study of TiO2 thin films annealed in oxygen ambient: article / Anis Ataillah Ismail |
title_full_unstemmed |
Photoconductivity study of TiO2 thin films annealed in oxygen ambient: article / Anis Ataillah Ismail |
title_sort |
photoconductivity study of tio2 thin films annealed in oxygen ambient: article / anis ataillah ismail |
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2010 |
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https://ir.uitm.edu.my/id/eprint/105322/1/105322.pdf https://ir.uitm.edu.my/id/eprint/105322/ |
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1814939942417072128 |
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