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Simulation of planar and FINFET transistor model for digital gate applications: article / Siti Aishah Abu Salim

Abstract -In this work, FinFET (dual-gate)r transistor is simulated using computer added design (CAD) tools to replacethe conventional planar MOSFET. Now a day planar transistors are no longer clean due to current leakage during one-off switches. Thus, these effects have caused some head and power...

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Main Author: Abu Salim, Siti Aishah
Format: Article
Language:English
Published: 2013
Online Access:https://ir.uitm.edu.my/id/eprint/105274/1/105274.pdf
https://ir.uitm.edu.my/id/eprint/105274/
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spelling my.uitm.ir.1052742024-10-19T16:07:05Z https://ir.uitm.edu.my/id/eprint/105274/ Simulation of planar and FINFET transistor model for digital gate applications: article / Siti Aishah Abu Salim Abu Salim, Siti Aishah Abstract -In this work, FinFET (dual-gate)r transistor is simulated using computer added design (CAD) tools to replacethe conventional planar MOSFET. Now a day planar transistors are no longer clean due to current leakage during one-off switches. Thus, these effects have caused some head and power issues. FinFET transistors offer superior performance as the device is scaled into the nanometer. Therefore, the ON current was investigated by analysing the I-V characteristic. Also the gate sizing was investigated and the results have shown the differences in their performances. In addition, the SPICE models of 32 nm were employed for inverter, NAND and NOR gates and the results were verified by DC and AC analysis. The results indicate that FinFET circuits have better performance and produced less leakage when compared to planar MOSFET. 2013 Article PeerReviewed text en https://ir.uitm.edu.my/id/eprint/105274/1/105274.pdf Simulation of planar and FINFET transistor model for digital gate applications: article / Siti Aishah Abu Salim. (2013) pp. 1-5.
institution Universiti Teknologi Mara
building Tun Abdul Razak Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Mara
content_source UiTM Institutional Repository
url_provider http://ir.uitm.edu.my/
language English
description Abstract -In this work, FinFET (dual-gate)r transistor is simulated using computer added design (CAD) tools to replacethe conventional planar MOSFET. Now a day planar transistors are no longer clean due to current leakage during one-off switches. Thus, these effects have caused some head and power issues. FinFET transistors offer superior performance as the device is scaled into the nanometer. Therefore, the ON current was investigated by analysing the I-V characteristic. Also the gate sizing was investigated and the results have shown the differences in their performances. In addition, the SPICE models of 32 nm were employed for inverter, NAND and NOR gates and the results were verified by DC and AC analysis. The results indicate that FinFET circuits have better performance and produced less leakage when compared to planar MOSFET.
format Article
author Abu Salim, Siti Aishah
spellingShingle Abu Salim, Siti Aishah
Simulation of planar and FINFET transistor model for digital gate applications: article / Siti Aishah Abu Salim
author_facet Abu Salim, Siti Aishah
author_sort Abu Salim, Siti Aishah
title Simulation of planar and FINFET transistor model for digital gate applications: article / Siti Aishah Abu Salim
title_short Simulation of planar and FINFET transistor model for digital gate applications: article / Siti Aishah Abu Salim
title_full Simulation of planar and FINFET transistor model for digital gate applications: article / Siti Aishah Abu Salim
title_fullStr Simulation of planar and FINFET transistor model for digital gate applications: article / Siti Aishah Abu Salim
title_full_unstemmed Simulation of planar and FINFET transistor model for digital gate applications: article / Siti Aishah Abu Salim
title_sort simulation of planar and finfet transistor model for digital gate applications: article / siti aishah abu salim
publishDate 2013
url https://ir.uitm.edu.my/id/eprint/105274/1/105274.pdf
https://ir.uitm.edu.my/id/eprint/105274/
_version_ 1814058673630085120
score 13.223943

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