Investigation of silicon nitride capping layer and embedded silicon germanium effect on 90nm CMOS devices / Norlina Mohd Zain

This thesis highlights the effect of Si3N4 capping layer, embedded SiGe in the source/drain and SiGe layer on the bottom of the strained silicon for strained-silicon technology effect on 90 nm complementary metal oxide semiconductor (CMOS) performance focusing on threshold voltage and drain current...

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Bibliographic Details
Main Author: Mohd Zain, Norlina
Format: Thesis
Language:English
Published: 2010
Subjects:
Online Access:https://ir.uitm.edu.my/id/eprint/102939/1/102939.pdf
https://ir.uitm.edu.my/id/eprint/102939/
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