Staff View: Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition

Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition

In chemical vapor deposition (CVD), homogeneous molybdenum vapor concentration is important in synthe- sizing uniform thickness and large coverage of two-dimensional molybdenum disulfide (2D-MoS2) films. Here, we synthesize few-layer MoS2 films with uniform thickness and adequate coverage over 50 mm...

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Main Authors:	Sirat, Mohamad Shukri, Johari, Muhammad Hilmi, Mohmad, Abdul Rahman, Mohammad Haniff, Muhammad Aniq Shazni, Ani, Mohd Hanafi, Syono, Mohd Ismahadi, Mohamed, Mohd Ambri
Format:	Article
Language:	English English
Published:	Elsevier 2022
Subjects:	T Technology (General) TA401 Materials of engineering and construction
Online Access:	http://irep.iium.edu.my/97769/1/97769_Uniform%20growth%20of%20MoS2%20films_SCOPUS.pdf http://irep.iium.edu.my/97769/7/97769_Uniform%20growth%20of%20MoS2%20films.pdf http://irep.iium.edu.my/97769/ https://www.journals.elsevier.com/thin-solid-films
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spelling	my.iium.irep.977692022-05-09T03:01:18Z http://irep.iium.edu.my/97769/ Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition Sirat, Mohamad Shukri Johari, Muhammad Hilmi Mohmad, Abdul Rahman Mohammad Haniff, Muhammad Aniq Shazni Ani, Mohd Hanafi Syono, Mohd Ismahadi Mohamed, Mohd Ambri T Technology (General) TA401 Materials of engineering and construction In chemical vapor deposition (CVD), homogeneous molybdenum vapor concentration is important in synthe- sizing uniform thickness and large coverage of two-dimensional molybdenum disulfide (2D-MoS2) films. Here, we synthesize few-layer MoS2 films with uniform thickness and adequate coverage over 50 mm2 size area using ultra-low molybdenum trioxide (MoO3) precursor placed directly under a face-down silicon dioxide/silicon (SiO2/Si) substrate in one-step heating CVD. The precursor mass is controlled by dispersing MoO3 powder in ethanol (C2H5OH) and varying the volume of MoO3/C2H5OH solution coated on SiO2/Si substrates into 10, 20 and 25 μL. Field emission scanning electron microscopy images reveal that 20 μL MoO3/C2H5OH solution pro- duces ~93% area coverage of 2D-MoS2 films. The average Raman spectra show the typical presence of MoS2 peaks around 378.8 cm− 1 and 404 cm− 1 referring to the E12g and A1g modes, respectively. The difference be- tween the two Raman modes for all samples is ~25 cm− 1, indicating few-layer MoS2 films. The thickness of MoS2 films is estimated at around 2.8 ± 0.44 nm and 3.2 ± 0.43 nm (~6 layers) using atomic force microscopy analysis. These findings suggest that ultra-low MoO3 precursor is useful to produce uniform thickness and high coverage few-layer MoS2 films using one-step heating CVD. Elsevier 2022 Article PeerReviewed application/pdf en http://irep.iium.edu.my/97769/1/97769_Uniform%20growth%20of%20MoS2%20films_SCOPUS.pdf application/pdf en http://irep.iium.edu.my/97769/7/97769_Uniform%20growth%20of%20MoS2%20films.pdf Sirat, Mohamad Shukri and Johari, Muhammad Hilmi and Mohmad, Abdul Rahman and Mohammad Haniff, Muhammad Aniq Shazni and Ani, Mohd Hanafi and Syono, Mohd Ismahadi and Mohamed, Mohd Ambri (2022) Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition. Thin Solid Films, 744. pp. 1-8. ISSN 0040-6090 https://www.journals.elsevier.com/thin-solid-films 10.1016/j.tsf.2022.139092
institution	Universiti Islam Antarabangsa Malaysia
building	IIUM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	International Islamic University Malaysia
content_source	IIUM Repository (IREP)
url_provider	http://irep.iium.edu.my/
language	English English
topic	T Technology (General) TA401 Materials of engineering and construction
spellingShingle	T Technology (General) TA401 Materials of engineering and construction Sirat, Mohamad Shukri Johari, Muhammad Hilmi Mohmad, Abdul Rahman Mohammad Haniff, Muhammad Aniq Shazni Ani, Mohd Hanafi Syono, Mohd Ismahadi Mohamed, Mohd Ambri Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition
description	In chemical vapor deposition (CVD), homogeneous molybdenum vapor concentration is important in synthe- sizing uniform thickness and large coverage of two-dimensional molybdenum disulfide (2D-MoS2) films. Here, we synthesize few-layer MoS2 films with uniform thickness and adequate coverage over 50 mm2 size area using ultra-low molybdenum trioxide (MoO3) precursor placed directly under a face-down silicon dioxide/silicon (SiO2/Si) substrate in one-step heating CVD. The precursor mass is controlled by dispersing MoO3 powder in ethanol (C2H5OH) and varying the volume of MoO3/C2H5OH solution coated on SiO2/Si substrates into 10, 20 and 25 μL. Field emission scanning electron microscopy images reveal that 20 μL MoO3/C2H5OH solution pro- duces ~93% area coverage of 2D-MoS2 films. The average Raman spectra show the typical presence of MoS2 peaks around 378.8 cm− 1 and 404 cm− 1 referring to the E12g and A1g modes, respectively. The difference be- tween the two Raman modes for all samples is ~25 cm− 1, indicating few-layer MoS2 films. The thickness of MoS2 films is estimated at around 2.8 ± 0.44 nm and 3.2 ± 0.43 nm (~6 layers) using atomic force microscopy analysis. These findings suggest that ultra-low MoO3 precursor is useful to produce uniform thickness and high coverage few-layer MoS2 films using one-step heating CVD.
format	Article
author	Sirat, Mohamad Shukri Johari, Muhammad Hilmi Mohmad, Abdul Rahman Mohammad Haniff, Muhammad Aniq Shazni Ani, Mohd Hanafi Syono, Mohd Ismahadi Mohamed, Mohd Ambri
author_facet	Sirat, Mohamad Shukri Johari, Muhammad Hilmi Mohmad, Abdul Rahman Mohammad Haniff, Muhammad Aniq Shazni Ani, Mohd Hanafi Syono, Mohd Ismahadi Mohamed, Mohd Ambri
author_sort	Sirat, Mohamad Shukri
title	Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition
title_short	Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition
title_full	Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition
title_fullStr	Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition
title_full_unstemmed	Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition
title_sort	uniform growth of mos2 films using ultra-low moo3 precursor in one-step heating chemical vapor deposition
publisher	Elsevier
publishDate	2022
url	http://irep.iium.edu.my/97769/1/97769_Uniform%20growth%20of%20MoS2%20films_SCOPUS.pdf http://irep.iium.edu.my/97769/7/97769_Uniform%20growth%20of%20MoS2%20films.pdf http://irep.iium.edu.my/97769/ https://www.journals.elsevier.com/thin-solid-films
_version_	1732945014774824960
score	13.211869

Uniform growth of MoS2 films using ultra-low MoO3 precursor in one-step heating chemical vapor deposition

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