Ferroelectric behavior and NCFETs - TCAD Simulation
With the miniaturization of transistors, the current leakage also increases due to the increasing tunnelling effect. Plus, Boltzmann’s tyranny limits the subthreshold swing to be best and ideal at 60 mV/decade. Due to these, the power consumption in transistors keeps soaring up. Therefore, in this p...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AlamBiblio Publishers
2021
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/89140/7/89140_ferroelectric%20behavior.pdf http://irep.iium.edu.my/89140/ https://journals.alambiblio.com/ojs/index.php/ajoeee/article/view/14 |
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