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Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)

The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed s...

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Main Authors: Sirat, Mohd Shukri, Ismail, Edhuan, Purwanto, Hadi, Mohd Abid, Mohd Asyadi Azam, Ani, Mohd Hanafi
Format: Article
Language:English
English
Published: Penerbit Universiti Kebangsaan Malaysia 2017
Subjects:
TA401 Materials of engineering and construction
TP155 Chemical engineering
Online Access:http://irep.iium.edu.my/60671/1/04%20Mohamad%20Shukri%20Sirat.pdf
http://irep.iium.edu.my/60671/7/60671_Growth%20conditions%20of%20graphene%20grown_scopus.pdf
http://irep.iium.edu.my/60671/
http://www.ukm.my/jsm/pdf_files/SM-PDF-46-7-2017/04%20Mohamad%20Shukri%20Sirat.pdf
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spelling my.iium.irep.606712018-05-04T08:46:16Z http://irep.iium.edu.my/60671/ Growth conditions of graphene grown in Chemical Vapour Deposition (CVD) Sirat, Mohd Shukri Ismail, Edhuan Purwanto, Hadi Mohd Abid, Mohd Asyadi Azam Ani, Mohd Hanafi TA401 Materials of engineering and construction TP155 Chemical engineering The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed such as electron mobility, transparency and conductivity as compared to the pristine graphene. Here, we did a study on the effects of reaction conditions such as methane, CH4 concentration and deposition time towards the quality of graphene produced. We found that by lowering both CH4 concentration down to 20% and deposition time to 5 min, a better quality graphene was produced with higher I2D/IG ratio of 0.82 compared to other reaction condition. Through the analysis, we concluded that there are two important parameters to be controlled to obtain high quality graphene. Penerbit Universiti Kebangsaan Malaysia 2017-07 Article REM application/pdf en http://irep.iium.edu.my/60671/1/04%20Mohamad%20Shukri%20Sirat.pdf application/pdf en http://irep.iium.edu.my/60671/7/60671_Growth%20conditions%20of%20graphene%20grown_scopus.pdf Sirat, Mohd Shukri and Ismail, Edhuan and Purwanto, Hadi and Mohd Abid, Mohd Asyadi Azam and Ani, Mohd Hanafi (2017) Growth conditions of graphene grown in Chemical Vapour Deposition (CVD). Sains Malaysiana, 46 (7). pp. 1033-1038. ISSN 0126-6039 http://www.ukm.my/jsm/pdf_files/SM-PDF-46-7-2017/04%20Mohamad%20Shukri%20Sirat.pdf 10.17576/jsm-2017-4607-04
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic TA401 Materials of engineering and construction
TP155 Chemical engineering
spellingShingle TA401 Materials of engineering and construction
TP155 Chemical engineering
Sirat, Mohd Shukri
Ismail, Edhuan
Purwanto, Hadi
Mohd Abid, Mohd Asyadi Azam
Ani, Mohd Hanafi
Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
description The fabrication of high quality graphene has become the main interest in current chemical vapour deposition (CVD) method due to the scalability for mass production of graphene-based electronic devices. The quality of graphene is determined by defect density, number of layers and properties changed such as electron mobility, transparency and conductivity as compared to the pristine graphene. Here, we did a study on the effects of reaction conditions such as methane, CH4 concentration and deposition time towards the quality of graphene produced. We found that by lowering both CH4 concentration down to 20% and deposition time to 5 min, a better quality graphene was produced with higher I2D/IG ratio of 0.82 compared to other reaction condition. Through the analysis, we concluded that there are two important parameters to be controlled to obtain high quality graphene.
format Article
author Sirat, Mohd Shukri
Ismail, Edhuan
Purwanto, Hadi
Mohd Abid, Mohd Asyadi Azam
Ani, Mohd Hanafi
author_facet Sirat, Mohd Shukri
Ismail, Edhuan
Purwanto, Hadi
Mohd Abid, Mohd Asyadi Azam
Ani, Mohd Hanafi
author_sort Sirat, Mohd Shukri
title Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
title_short Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
title_full Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
title_fullStr Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
title_full_unstemmed Growth conditions of graphene grown in Chemical Vapour Deposition (CVD)
title_sort growth conditions of graphene grown in chemical vapour deposition (cvd)
publisher Penerbit Universiti Kebangsaan Malaysia
publishDate 2017
url http://irep.iium.edu.my/60671/1/04%20Mohamad%20Shukri%20Sirat.pdf
http://irep.iium.edu.my/60671/7/60671_Growth%20conditions%20of%20graphene%20grown_scopus.pdf
http://irep.iium.edu.my/60671/
http://www.ukm.my/jsm/pdf_files/SM-PDF-46-7-2017/04%20Mohamad%20Shukri%20Sirat.pdf
_version_ 1643615843900194816
score 13.211869

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