A comparative analysis of the effect of temperature on band-gap energy of gallium nitride and its stability beyond room temperature using a Bose–Einstein model and Varshni'S model
High temperature stability of the band-gap energy of the active layer material of a semiconductor device is one of the major challenges in the field of semiconductor optoelectronic device design. It is essential to ensure the stability in different band-gap energy-dependent characteristics of the se...
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| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English English |
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International Islamic University Malaysia-IIUM
2017
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| Online Access: | http://irep.iium.edu.my/59526/13/59526_A%20comparative%20analysis%20of%20the%20effect%20of%20temperature_article.pdf http://irep.iium.edu.my/59526/7/59526_A%20comparative%20analysis%20of%20the%20effect%20of%20temperature%20on%20band-gap%20energy%20of%20gallium%20nitride_SCOPUS.pdf http://irep.iium.edu.my/59526/ http://journals.iium.edu.my/ejournal/index.php/iiumej/pages/view/future_articles |
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