Development of high frequency 14 nm CNTFET model

Carbon nanotube field-effect transistor (CNTFET) is a nano scale electronics device that has excellent electrical proper to perform fast operation. In this research, a 14 nm CNTFET model has been proposed to operate in high frequency performance. The CNTFET model is developed by quantum capacitance...

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Main Authors: Farhana, Soheli, Alam, A.H.M Zahirul
Format: Article
Language:English
English
Published: Elsevier Ltd 2016
Subjects:
Online Access:http://irep.iium.edu.my/58756/1/58756_Development%20of%20High%20Frequency_article.pdf
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http://www.sciencedirect.com/science/article/pii/S2214785316000687
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spelling my.iium.irep.587562017-10-12T10:33:57Z http://irep.iium.edu.my/58756/ Development of high frequency 14 nm CNTFET model Farhana, Soheli Alam, A.H.M Zahirul QC Physics TA Engineering (General). Civil engineering (General) Carbon nanotube field-effect transistor (CNTFET) is a nano scale electronics device that has excellent electrical proper to perform fast operation. In this research, a 14 nm CNTFET model has been proposed to operate in high frequency performance. The CNTFET model is developed by quantum capacitance and electrostatic capacitance to enhance the mode of nanotube transistor. It can be used for design of nanotube transistor circuits as well as to study performance. A model of the Carbon nanotube transistor with the influence of quantum capacitance and ballistic transport on the high-frequency properties of nanotube transistors is also analyzed in this research. Elsevier Ltd 2016 Article REM application/pdf en http://irep.iium.edu.my/58756/1/58756_Development%20of%20High%20Frequency_article.pdf application/pdf en http://irep.iium.edu.my/58756/2/58756_Development%20of%20High%20Frequency_scopus.pdf Farhana, Soheli and Alam, A.H.M Zahirul (2016) Development of high frequency 14 nm CNTFET model. Materials Today: Proceedings, 3 (2). pp. 258-264. ISSN 22147853 http://www.sciencedirect.com/science/article/pii/S2214785316000687 10.1016/j.matpr.2016.01.067
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic QC Physics
TA Engineering (General). Civil engineering (General)
spellingShingle QC Physics
TA Engineering (General). Civil engineering (General)
Farhana, Soheli
Alam, A.H.M Zahirul
Development of high frequency 14 nm CNTFET model
description Carbon nanotube field-effect transistor (CNTFET) is a nano scale electronics device that has excellent electrical proper to perform fast operation. In this research, a 14 nm CNTFET model has been proposed to operate in high frequency performance. The CNTFET model is developed by quantum capacitance and electrostatic capacitance to enhance the mode of nanotube transistor. It can be used for design of nanotube transistor circuits as well as to study performance. A model of the Carbon nanotube transistor with the influence of quantum capacitance and ballistic transport on the high-frequency properties of nanotube transistors is also analyzed in this research.
format Article
author Farhana, Soheli
Alam, A.H.M Zahirul
author_facet Farhana, Soheli
Alam, A.H.M Zahirul
author_sort Farhana, Soheli
title Development of high frequency 14 nm CNTFET model
title_short Development of high frequency 14 nm CNTFET model
title_full Development of high frequency 14 nm CNTFET model
title_fullStr Development of high frequency 14 nm CNTFET model
title_full_unstemmed Development of high frequency 14 nm CNTFET model
title_sort development of high frequency 14 nm cntfet model
publisher Elsevier Ltd
publishDate 2016
url http://irep.iium.edu.my/58756/1/58756_Development%20of%20High%20Frequency_article.pdf
http://irep.iium.edu.my/58756/2/58756_Development%20of%20High%20Frequency_scopus.pdf
http://irep.iium.edu.my/58756/
http://www.sciencedirect.com/science/article/pii/S2214785316000687
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score 13.211869