The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress

In this paper, we investigated analytically the frequency equations for shear horizontal wave propagation in a piezoelectric half space covered by a semiconductor film with initial stress effect. The semiconducting layer is influenced by initial stress and the interface between the piezoelectric sub...

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Main Authors: Abd-alla, Abo el nour N, Hasbullah, Nurul Fadzlin, Hossen, Hala M.
Format: Article
Language:English
English
Published: American Scientific Publishers 2016
Subjects:
Online Access:http://irep.iium.edu.my/56563/1/56563_The%20frequency%20equations%20for%20shear%20horizontal%20waves.pdf
http://irep.iium.edu.my/56563/2/56563_The%20frequency%20equations%20for%20shear%20horizontal%20waves_Scopus.pdf
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spelling my.iium.irep.565632017-04-25T02:39:31Z http://irep.iium.edu.my/56563/ The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress Abd-alla, Abo el nour N Hasbullah, Nurul Fadzlin Hossen, Hala M. TK Electrical engineering. Electronics Nuclear engineering In this paper, we investigated analytically the frequency equations for shear horizontal wave propagation in a piezoelectric half space covered by a semiconductor film with initial stress effect. The semiconducting layer is influenced by initial stress and the interface between the piezoelectric substrate and the semiconductor layer. The governing equations of the mechanical displacement and electrical potential function under the effect of initial stress are obtained by solving the coupled electromechanical field equations of the piezoelectric half-space and the semiconductor film. Next, the numerical examples are presented to illustrate the influence of initial stress and electromagnetic boundary conditions for the different values of the film thickness and wave number. Furthermore, we studied in more details the effect of initial stress on the frequency equation for piezoelectric Barium Titanate (BaTiO3) and semiconductor silicon. The obtained results provide a predictable and theoretical basis for applications of piezoelectric and semiconductor composites to acoustic wave devices. American Scientific Publishers 2016 Article REM application/pdf en http://irep.iium.edu.my/56563/1/56563_The%20frequency%20equations%20for%20shear%20horizontal%20waves.pdf application/pdf en http://irep.iium.edu.my/56563/2/56563_The%20frequency%20equations%20for%20shear%20horizontal%20waves_Scopus.pdf Abd-alla, Abo el nour N and Hasbullah, Nurul Fadzlin and Hossen, Hala M. (2016) The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress. Journal of Computational and Theoretical Nanoscience, 13 (10). pp. 6475-6481. ISSN 1546-1955 http://www.ingentaconnect.com/content/asp/jctn/2016/00000013/00000010/art00009 https://doi.org/10.1166/jctn.2016.5589
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Abd-alla, Abo el nour N
Hasbullah, Nurul Fadzlin
Hossen, Hala M.
The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress
description In this paper, we investigated analytically the frequency equations for shear horizontal wave propagation in a piezoelectric half space covered by a semiconductor film with initial stress effect. The semiconducting layer is influenced by initial stress and the interface between the piezoelectric substrate and the semiconductor layer. The governing equations of the mechanical displacement and electrical potential function under the effect of initial stress are obtained by solving the coupled electromechanical field equations of the piezoelectric half-space and the semiconductor film. Next, the numerical examples are presented to illustrate the influence of initial stress and electromagnetic boundary conditions for the different values of the film thickness and wave number. Furthermore, we studied in more details the effect of initial stress on the frequency equation for piezoelectric Barium Titanate (BaTiO3) and semiconductor silicon. The obtained results provide a predictable and theoretical basis for applications of piezoelectric and semiconductor composites to acoustic wave devices.
format Article
author Abd-alla, Abo el nour N
Hasbullah, Nurul Fadzlin
Hossen, Hala M.
author_facet Abd-alla, Abo el nour N
Hasbullah, Nurul Fadzlin
Hossen, Hala M.
author_sort Abd-alla, Abo el nour N
title The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress
title_short The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress
title_full The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress
title_fullStr The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress
title_full_unstemmed The frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress
title_sort frequency equations for shear horizontal waves in semiconductor/piezoelectric structures under the influence of initial stress
publisher American Scientific Publishers
publishDate 2016
url http://irep.iium.edu.my/56563/1/56563_The%20frequency%20equations%20for%20shear%20horizontal%20waves.pdf
http://irep.iium.edu.my/56563/2/56563_The%20frequency%20equations%20for%20shear%20horizontal%20waves_Scopus.pdf
http://irep.iium.edu.my/56563/
http://www.ingentaconnect.com/content/asp/jctn/2016/00000013/00000010/art00009
https://doi.org/10.1166/jctn.2016.5589
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score 13.211869