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Technology and performance: Carbon Nanotube (CNT) Field Effect Transistor (FET) in VLSI circuit design

Nano size carbon, such as carbon nanotubes (CNTs) and graphene has remarkable electronic properties for high-frequency electronics in terms of designing VLSI circuits. CNTFETs are the best candidates for nano electronics as well as upcoming digital devices in near future. An intensive review is...

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Main Authors: .., Soheli Farhana, Noordin, Mohd Fauzan
Format: Conference or Workshop Item
Language:English
English
Published: IEEE 2016
Subjects:
T Technology (General)
Online Access:http://irep.iium.edu.my/51808/1/51808.pdf
http://irep.iium.edu.my/51808/2/51808-Technology%20and%20performance_SCOPUS.pdf
http://irep.iium.edu.my/51808/
http://ieeexplore.ieee.org/document/7777920/
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spelling my.iium.irep.518082017-10-10T03:14:50Z http://irep.iium.edu.my/51808/ Technology and performance: Carbon Nanotube (CNT) Field Effect Transistor (FET) in VLSI circuit design .., Soheli Farhana Noordin, Mohd Fauzan T Technology (General) Nano size carbon, such as carbon nanotubes (CNTs) and graphene has remarkable electronic properties for high-frequency electronics in terms of designing VLSI circuits. CNTFETs are the best candidates for nano electronics as well as upcoming digital devices in near future. An intensive review is presented in this paper. The structure, materials, application and the characteristics of CNTFETs are analyzed here for the future generation miniature device. IEEE 2016 Conference or Workshop Item REM application/pdf en http://irep.iium.edu.my/51808/1/51808.pdf application/pdf en http://irep.iium.edu.my/51808/2/51808-Technology%20and%20performance_SCOPUS.pdf .., Soheli Farhana and Noordin, Mohd Fauzan (2016) Technology and performance: Carbon Nanotube (CNT) Field Effect Transistor (FET) in VLSI circuit design. In: IEEE 7th Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON), 20th-22nd October 2016, New York, USA. http://ieeexplore.ieee.org/document/7777920/ 10.1109/UEMCON.2016.7777920
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic T Technology (General)
spellingShingle T Technology (General)
.., Soheli Farhana
Noordin, Mohd Fauzan
Technology and performance: Carbon Nanotube (CNT) Field Effect Transistor (FET) in VLSI circuit design
description Nano size carbon, such as carbon nanotubes (CNTs) and graphene has remarkable electronic properties for high-frequency electronics in terms of designing VLSI circuits. CNTFETs are the best candidates for nano electronics as well as upcoming digital devices in near future. An intensive review is presented in this paper. The structure, materials, application and the characteristics of CNTFETs are analyzed here for the future generation miniature device.
format Conference or Workshop Item
author .., Soheli Farhana
Noordin, Mohd Fauzan
author_facet .., Soheli Farhana
Noordin, Mohd Fauzan
author_sort .., Soheli Farhana
title Technology and performance: Carbon Nanotube (CNT) Field Effect Transistor (FET) in VLSI circuit design
title_short Technology and performance: Carbon Nanotube (CNT) Field Effect Transistor (FET) in VLSI circuit design
title_full Technology and performance: Carbon Nanotube (CNT) Field Effect Transistor (FET) in VLSI circuit design
title_fullStr Technology and performance: Carbon Nanotube (CNT) Field Effect Transistor (FET) in VLSI circuit design
title_full_unstemmed Technology and performance: Carbon Nanotube (CNT) Field Effect Transistor (FET) in VLSI circuit design
title_sort technology and performance: carbon nanotube (cnt) field effect transistor (fet) in vlsi circuit design
publisher IEEE
publishDate 2016
url http://irep.iium.edu.my/51808/1/51808.pdf
http://irep.iium.edu.my/51808/2/51808-Technology%20and%20performance_SCOPUS.pdf
http://irep.iium.edu.my/51808/
http://ieeexplore.ieee.org/document/7777920/
_version_ 1643614043712258048
score 13.211869

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