Cover Image

Optimum performance of carbon nanotube field effect transistor

Phenomenological predictions have been elucidated in this paper. The predictions are elaborated for the field effect transistor using carbon nanotube (CNT) technology. CNTs have small band gap compare to other traditional semiconductor technologies. The modeling of a single wall nanotube with opti...

Full description

Saved in:
Bibliographic Details
Main Authors: Farhana, Soheli, Alam, A. H. M. Zahirul, Khan, Sheroz
Format: Conference or Workshop Item
Language:English
English
Published: 2014
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://irep.iium.edu.my/38989/1/WCECS2014_pp284-288.pdf
http://irep.iium.edu.my/38989/4/38989_Optimum%20performance%20of%20carbon%20nanotube%20field%20effect%20transistor.SCOPUS.pdf
http://irep.iium.edu.my/38989/
http://www.iaeng.org/publication/WCECS2014/
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.iium.irep.38989
record_format dspace
spelling my.iium.irep.389892018-06-11T04:38:58Z http://irep.iium.edu.my/38989/ Optimum performance of carbon nanotube field effect transistor Farhana, Soheli Alam, A. H. M. Zahirul Khan, Sheroz TK Electrical engineering. Electronics Nuclear engineering Phenomenological predictions have been elucidated in this paper. The predictions are elaborated for the field effect transistor using carbon nanotube (CNT) technology. CNTs have small band gap compare to other traditional semiconductor technologies. The modeling of a single wall nanotube with optimum bandgap for the designing of the carbon nanotube (CNTFET) is the aim of this work. Analysis of I-V characteristics of CNTFET with the drain current-voltage analytical relation enables the lower energy consumption from the proposed design. In this research, the optimum carbon nanotube (CNTs) is analyzed where the bandgap is 0.45eV as well as the diameter is 1.95nm. Modeling of CNTFET will be useful for semiconductor industries in order to manufacture the nano scale device. 2014-10-22 Conference or Workshop Item REM application/pdf en http://irep.iium.edu.my/38989/1/WCECS2014_pp284-288.pdf application/pdf en http://irep.iium.edu.my/38989/4/38989_Optimum%20performance%20of%20carbon%20nanotube%20field%20effect%20transistor.SCOPUS.pdf Farhana, Soheli and Alam, A. H. M. Zahirul and Khan, Sheroz (2014) Optimum performance of carbon nanotube field effect transistor. In: World Congress on Engineering and Computer Science 2014, October 22 - 24, 2014, San Francisco, USA. http://www.iaeng.org/publication/WCECS2014/
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Farhana, Soheli
Alam, A. H. M. Zahirul
Khan, Sheroz
Optimum performance of carbon nanotube field effect transistor
description Phenomenological predictions have been elucidated in this paper. The predictions are elaborated for the field effect transistor using carbon nanotube (CNT) technology. CNTs have small band gap compare to other traditional semiconductor technologies. The modeling of a single wall nanotube with optimum bandgap for the designing of the carbon nanotube (CNTFET) is the aim of this work. Analysis of I-V characteristics of CNTFET with the drain current-voltage analytical relation enables the lower energy consumption from the proposed design. In this research, the optimum carbon nanotube (CNTs) is analyzed where the bandgap is 0.45eV as well as the diameter is 1.95nm. Modeling of CNTFET will be useful for semiconductor industries in order to manufacture the nano scale device.
format Conference or Workshop Item
author Farhana, Soheli
Alam, A. H. M. Zahirul
Khan, Sheroz
author_facet Farhana, Soheli
Alam, A. H. M. Zahirul
Khan, Sheroz
author_sort Farhana, Soheli
title Optimum performance of carbon nanotube field effect transistor
title_short Optimum performance of carbon nanotube field effect transistor
title_full Optimum performance of carbon nanotube field effect transistor
title_fullStr Optimum performance of carbon nanotube field effect transistor
title_full_unstemmed Optimum performance of carbon nanotube field effect transistor
title_sort optimum performance of carbon nanotube field effect transistor
publishDate 2014
url http://irep.iium.edu.my/38989/1/WCECS2014_pp284-288.pdf
http://irep.iium.edu.my/38989/4/38989_Optimum%20performance%20of%20carbon%20nanotube%20field%20effect%20transistor.SCOPUS.pdf
http://irep.iium.edu.my/38989/
http://www.iaeng.org/publication/WCECS2014/
_version_ 1643616487262388224
score 13.211869

Similar Items