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Improving μ-wire electro-discharge machining operation of polished silicon wafer by conductive coating

Micro-Wire Electro-discharge machining (-WEDM) is a nonconventional machining technology which is extensively used for metal based micro fabrication process. This is a non-contact machining process where material removal is taken place by electro-thermal action. -WEDM process is difficult to be...

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Main Authors: Rasheed, Aous Naji, Abdul Muthalif, Asan Gani, Saleh, Tanveer
Format: Conference or Workshop Item
Language:English
English
Published: 2014
Subjects:
T Technology (General)
Online Access:http://irep.iium.edu.my/37351/1/ICOMM_2014_aous.pdf
http://irep.iium.edu.my/37351/2/ICOMM_2014_proof.pdf
http://irep.iium.edu.my/37351/
http://minds.wisconsin.edu/handle/1793/68989?show=full
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spelling my.iium.irep.373512015-01-12T15:22:35Z http://irep.iium.edu.my/37351/ Improving μ-wire electro-discharge machining operation of polished silicon wafer by conductive coating Rasheed, Aous Naji Abdul Muthalif, Asan Gani Saleh, Tanveer T Technology (General) Micro-Wire Electro-discharge machining (-WEDM) is a nonconventional machining technology which is extensively used for metal based micro fabrication process. This is a non-contact machining process where material removal is taken place by electro-thermal action. -WEDM process is difficult to be applied for semiconductor material like Silicon (Si). In this paper a new approach is proposed for machining polished Si (p-type, resistivity 1-50 -cm) wafer. In this method, initially Si workpiece is coated with a conductive material (gold for this study) and then -WEDM operation is carried out. Finally, after WEDM operation, the conductive layer is removed from the polished Si substrate without damaging the substrate. WEDM process stability was found to be improved (up to 60 times for certain machining condition) if coated Si wafer is used as compared to uncoated Si workpiece. Material removal rate was also found to be increased by a good margin (~ 100% maximum) for coated Si wafer. Overall this new method of -WEDM operation of polished Si wafer has been found to be more efficient and useful. 2014 Conference or Workshop Item REM application/pdf en http://irep.iium.edu.my/37351/1/ICOMM_2014_aous.pdf application/pdf en http://irep.iium.edu.my/37351/2/ICOMM_2014_proof.pdf Rasheed, Aous Naji and Abdul Muthalif, Asan Gani and Saleh, Tanveer (2014) Improving μ-wire electro-discharge machining operation of polished silicon wafer by conductive coating. In: 9th International Conference on MicroManufacturing (ICOMM 2014), 25 - 28 Mar 2014, Singapore. http://minds.wisconsin.edu/handle/1793/68989?show=full
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic T Technology (General)
spellingShingle T Technology (General)
Rasheed, Aous Naji
Abdul Muthalif, Asan Gani
Saleh, Tanveer
Improving μ-wire electro-discharge machining operation of polished silicon wafer by conductive coating
description Micro-Wire Electro-discharge machining (-WEDM) is a nonconventional machining technology which is extensively used for metal based micro fabrication process. This is a non-contact machining process where material removal is taken place by electro-thermal action. -WEDM process is difficult to be applied for semiconductor material like Silicon (Si). In this paper a new approach is proposed for machining polished Si (p-type, resistivity 1-50 -cm) wafer. In this method, initially Si workpiece is coated with a conductive material (gold for this study) and then -WEDM operation is carried out. Finally, after WEDM operation, the conductive layer is removed from the polished Si substrate without damaging the substrate. WEDM process stability was found to be improved (up to 60 times for certain machining condition) if coated Si wafer is used as compared to uncoated Si workpiece. Material removal rate was also found to be increased by a good margin (~ 100% maximum) for coated Si wafer. Overall this new method of -WEDM operation of polished Si wafer has been found to be more efficient and useful.
format Conference or Workshop Item
author Rasheed, Aous Naji
Abdul Muthalif, Asan Gani
Saleh, Tanveer
author_facet Rasheed, Aous Naji
Abdul Muthalif, Asan Gani
Saleh, Tanveer
author_sort Rasheed, Aous Naji
title Improving μ-wire electro-discharge machining operation of polished silicon wafer by conductive coating
title_short Improving μ-wire electro-discharge machining operation of polished silicon wafer by conductive coating
title_full Improving μ-wire electro-discharge machining operation of polished silicon wafer by conductive coating
title_fullStr Improving μ-wire electro-discharge machining operation of polished silicon wafer by conductive coating
title_full_unstemmed Improving μ-wire electro-discharge machining operation of polished silicon wafer by conductive coating
title_sort improving μ-wire electro-discharge machining operation of polished silicon wafer by conductive coating
publishDate 2014
url http://irep.iium.edu.my/37351/1/ICOMM_2014_aous.pdf
http://irep.iium.edu.my/37351/2/ICOMM_2014_proof.pdf
http://irep.iium.edu.my/37351/
http://minds.wisconsin.edu/handle/1793/68989?show=full
_version_ 1643611188720828416
score 13.211869

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