Effect of lattice potential upon the surface diffusion of Si on Si(100)
The surfacediffusion of Si atoms on Si(100) is examined using three different lattice potentials suggested by Keating, by Weber, and by Baraff e t a l. Jump frequencies of Si atoms between adjacent adsorbtion sites are computed on each potential surface at 800, 1000, 1200, and 1500 K using classic...
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| 主要な著者: | , , |
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| フォーマット: | 論文 |
| 言語: | English |
| 出版事項: |
American Institute of Physics (AIP)
1985
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| 主題: | |
| オンライン･アクセス: | http://irep.iium.edu.my/35142/1/JCP1985_Si%28100%29.pdf http://irep.iium.edu.my/35142/ http://scitation.aip.org/content/aip/journal/jcp/83/11/10.1063/1.449635 |
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