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Study of the electrical properties of radiation hard devices based on III-V materials

In this fast developing era of technological advancement, semiconductor devices hold vital key due to its vast usefulness in every integrated circuit. Most electronic devices nowadays are fabricated using semiconductor materials. GaAs is preferred over silicon to produce devices due to it being more...

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Main Authors: Hasbullah, Nurul Fadzlin, Alam, A. H. M. Zahirul
Format: Monograph
Language:English
English
Published: [s.n] 2012
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://irep.iium.edu.my/31397/1/EndofProjectReportForm-3.pdf
http://irep.iium.edu.my/31397/2/ICCCE2012_ver4_latest_MSW_USltr_format.pdf
http://irep.iium.edu.my/31397/
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spelling my.iium.irep.313972013-09-30T08:54:30Z http://irep.iium.edu.my/31397/ Study of the electrical properties of radiation hard devices based on III-V materials Hasbullah, Nurul Fadzlin Alam, A. H. M. Zahirul TK Electrical engineering. Electronics Nuclear engineering In this fast developing era of technological advancement, semiconductor devices hold vital key due to its vast usefulness in every integrated circuit. Most electronic devices nowadays are fabricated using semiconductor materials. GaAs is preferred over silicon to produce devices due to it being more resistant to defects due to radiation. However, literature has proven that defects due to radiation are dependent on the type of radiation and material of the device. Exposure to neutrons can produce measurable changes in the electrical properties and degradations of various semiconductors such as displacement damage effects and indirect ionization. This research studies the effects of neutron radiation by analyzing its current-voltage (I-V) characteristics and comparing it to the commercial silicon or GaAs diodes. The results of neutron radiation using the pneumatic transfer system show leakage current increment in all diodes after bombardment. The increase in leakage current is interpreted as being due to an increase of generation-recombination traps created in the band gap after radiation which indicates device degradation. However the GaAs infrared emitting diode showed a higher leakage current increment compared to the silicon switching diodes. This may be due to gold doping in silicon which may reduce the effects of neutron irradiation by restricting the formation of other energy levels in the bandgap (McPherson et al. 1997). [s.n] 2012-05-11 Monograph REM application/pdf en http://irep.iium.edu.my/31397/1/EndofProjectReportForm-3.pdf application/pdf en http://irep.iium.edu.my/31397/2/ICCCE2012_ver4_latest_MSW_USltr_format.pdf Hasbullah, Nurul Fadzlin and Alam, A. H. M. Zahirul (2012) Study of the electrical properties of radiation hard devices based on III-V materials. Research Report. [s.n]. (Unpublished)
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hasbullah, Nurul Fadzlin
Alam, A. H. M. Zahirul
Study of the electrical properties of radiation hard devices based on III-V materials
description In this fast developing era of technological advancement, semiconductor devices hold vital key due to its vast usefulness in every integrated circuit. Most electronic devices nowadays are fabricated using semiconductor materials. GaAs is preferred over silicon to produce devices due to it being more resistant to defects due to radiation. However, literature has proven that defects due to radiation are dependent on the type of radiation and material of the device. Exposure to neutrons can produce measurable changes in the electrical properties and degradations of various semiconductors such as displacement damage effects and indirect ionization. This research studies the effects of neutron radiation by analyzing its current-voltage (I-V) characteristics and comparing it to the commercial silicon or GaAs diodes. The results of neutron radiation using the pneumatic transfer system show leakage current increment in all diodes after bombardment. The increase in leakage current is interpreted as being due to an increase of generation-recombination traps created in the band gap after radiation which indicates device degradation. However the GaAs infrared emitting diode showed a higher leakage current increment compared to the silicon switching diodes. This may be due to gold doping in silicon which may reduce the effects of neutron irradiation by restricting the formation of other energy levels in the bandgap (McPherson et al. 1997).
format Monograph
author Hasbullah, Nurul Fadzlin
Alam, A. H. M. Zahirul
author_facet Hasbullah, Nurul Fadzlin
Alam, A. H. M. Zahirul
author_sort Hasbullah, Nurul Fadzlin
title Study of the electrical properties of radiation hard devices based on III-V materials
title_short Study of the electrical properties of radiation hard devices based on III-V materials
title_full Study of the electrical properties of radiation hard devices based on III-V materials
title_fullStr Study of the electrical properties of radiation hard devices based on III-V materials
title_full_unstemmed Study of the electrical properties of radiation hard devices based on III-V materials
title_sort study of the electrical properties of radiation hard devices based on iii-v materials
publisher [s.n]
publishDate 2012
url http://irep.iium.edu.my/31397/1/EndofProjectReportForm-3.pdf
http://irep.iium.edu.my/31397/2/ICCCE2012_ver4_latest_MSW_USltr_format.pdf
http://irep.iium.edu.my/31397/
_version_ 1643610020883988480
score 13.211869

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