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p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency

Amodification of the thickness of the low-growth- emperature component of the GaAs spacer layers in multilayer 1.3 um InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15...

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Main Authors: Liu, H. Y., Liew, S. L., Badcock, T., Mowbray, D. J., Skolnick, M. S., Ray, S. K., Choi, T. L., Groom, K. M., Stevens, B., Hasbullah, Nurul Fadzlin, Jin, C. Y., Hopkinson, M., Hogg, R. A.
Format: Article
Language:English
Published: American Institute of Physics 2006
Subjects:
QC Physics
TA1501 Applied optics. Lasers
Online Access:http://irep.iium.edu.my/1306/1/p-doped__1.3um_InAs-GaAs_QD_laser-Liu_2006.pdf
http://irep.iium.edu.my/1306/
http://apl.aip.org/resource/1/applab/v89/i7/p073113_s1?isAuthorized=no
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spelling my.iium.irep.13062011-08-15T03:33:01Z http://irep.iium.edu.my/1306/ p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency Liu, H. Y. Liew, S. L. Badcock, T. Mowbray, D. J. Skolnick, M. S. Ray, S. K. Choi, T. L. Groom, K. M. Stevens, B. Hasbullah, Nurul Fadzlin Jin, C. Y. Hopkinson, M. Hogg, R. A. QC Physics TA1501 Applied optics. Lasers Amodification of the thickness of the low-growth- emperature component of the GaAs spacer layers in multilayer 1.3 um InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15 to 2 nm results in a reduced reverse bias leakage current and an increase in the intensity of the spontaneous emission. In addition, a significant reduction of the threshold current density and an increase of the external differential efficiency at room temperature are obtained. These improvements indicate a reduced defect density, most probably a combination of the selective elimination of a very low density of dislocated dots and a smaller number of defects in the thinner low-growth-temperature component of the GaAs spacer layer. American Institute of Physics 2006-08-17 Article REM application/pdf en http://irep.iium.edu.my/1306/1/p-doped__1.3um_InAs-GaAs_QD_laser-Liu_2006.pdf Liu, H. Y. and Liew, S. L. and Badcock, T. and Mowbray, D. J. and Skolnick, M. S. and Ray, S. K. and Choi, T. L. and Groom, K. M. and Stevens, B. and Hasbullah, Nurul Fadzlin and Jin, C. Y. and Hopkinson, M. and Hogg, R. A. (2006) p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency. Applied Physics Letter, 89 (7). 073113-1. ISSN 1077-3118 (O), 0003-6951 (P) http://apl.aip.org/resource/1/applab/v89/i7/p073113_s1?isAuthorized=no doi:10.1063/1.2336998
institution Universiti Islam Antarabangsa Malaysia
building IIUM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider International Islamic University Malaysia
content_source IIUM Repository (IREP)
url_provider http://irep.iium.edu.my/
language English
topic QC Physics
TA1501 Applied optics. Lasers
spellingShingle QC Physics
TA1501 Applied optics. Lasers
Liu, H. Y.
Liew, S. L.
Badcock, T.
Mowbray, D. J.
Skolnick, M. S.
Ray, S. K.
Choi, T. L.
Groom, K. M.
Stevens, B.
Hasbullah, Nurul Fadzlin
Jin, C. Y.
Hopkinson, M.
Hogg, R. A.
p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
description Amodification of the thickness of the low-growth- emperature component of the GaAs spacer layers in multilayer 1.3 um InAs/GaAs quantum-dot (QD) lasers has been used to significantly improve device performance. For a p-doped seven-layer device, a reduction in the thickness of this component from 15 to 2 nm results in a reduced reverse bias leakage current and an increase in the intensity of the spontaneous emission. In addition, a significant reduction of the threshold current density and an increase of the external differential efficiency at room temperature are obtained. These improvements indicate a reduced defect density, most probably a combination of the selective elimination of a very low density of dislocated dots and a smaller number of defects in the thinner low-growth-temperature component of the GaAs spacer layer.
format Article
author Liu, H. Y.
Liew, S. L.
Badcock, T.
Mowbray, D. J.
Skolnick, M. S.
Ray, S. K.
Choi, T. L.
Groom, K. M.
Stevens, B.
Hasbullah, Nurul Fadzlin
Jin, C. Y.
Hopkinson, M.
Hogg, R. A.
author_facet Liu, H. Y.
Liew, S. L.
Badcock, T.
Mowbray, D. J.
Skolnick, M. S.
Ray, S. K.
Choi, T. L.
Groom, K. M.
Stevens, B.
Hasbullah, Nurul Fadzlin
Jin, C. Y.
Hopkinson, M.
Hogg, R. A.
author_sort Liu, H. Y.
title p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
title_short p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
title_full p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
title_fullStr p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
title_full_unstemmed p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
title_sort p-doped 1.3 μm inas/gaas quantum-dot laser with a low threshold current density and high differential efficiency
publisher American Institute of Physics
publishDate 2006
url http://irep.iium.edu.my/1306/1/p-doped__1.3um_InAs-GaAs_QD_laser-Liu_2006.pdf
http://irep.iium.edu.my/1306/
http://apl.aip.org/resource/1/applab/v89/i7/p073113_s1?isAuthorized=no
_version_ 1643604757590310912
score 13.211869

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