STUDY THE EFFECT OF GATE OXIDE THICKNESS AND LDD DOPING PROFILE ON THE PERFORMANCE OF LDMOS BY USING SIMULATOR
LDMOS is a silicon deviceand has been provento be a populardevice in high power RF application. It has excellent efficiency, linearity and peak power capability. The LDMOS roadmap is always to improve intrinsic die performance in key areas such as efficiency, gain and continuing focus on cost - e...
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| Format: | Final Year Project |
| Language: | English |
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Universiti Teknologi PETRONAS
2007
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| Online Access: | http://utpedia.utp.edu.my/9629/1/2007%20-%20Study%20the%20Effect%20of%20Gate%20Oxide%20Thickness%20and%20LDD%20Doping%20Profile%20on%20the%20Performance%20of%20LDMO.pdf http://utpedia.utp.edu.my/9629/ |
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