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PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES

A basic memory cell of Static Random Access Memory (SRAM) topology consists of four transistors which act as a flip flop and two more transistors will act as pass transistor. In this study, experiment is done by varying the values of different variables that can affect the performance of basic me...

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Main Author: MD TUMIRAN, NADIAH
Format: Final Year Project
Language:English
Published: Universiti Teknologi Petronas 2011
Subjects:
TJ Mechanical engineering and machinery
Online Access:http://utpedia.utp.edu.my/8318/1/2011%20-%20Performance%20study%20of%201%20bit%20static%20Ram%20based%20on%20process%20technologies.pdf
http://utpedia.utp.edu.my/8318/
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spelling my-utp-utpedia.83182017-01-25T09:42:14Z http://utpedia.utp.edu.my/8318/ PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES MD TUMIRAN, NADIAH TJ Mechanical engineering and machinery A basic memory cell of Static Random Access Memory (SRAM) topology consists of four transistors which act as a flip flop and two more transistors will act as pass transistor. In this study, experiment is done by varying the values of different variables that can affect the performance of basic memory cell. Among the variables are magnitudes of voltage supply, temperature, clock frequency and process technology to be used in fabrication of memory cell. These variables will have their own limit due to the configuration of circuit and properties transistor parameters in the memory cell. These values will determine the performance of the memory cell. The studies are carried out using various process technologies by simulation at schematic level. The results show that higher clock frequency will require higher value of supplied voltage. Lower supplied voltage will make SRAM failed to operate at high temperature. Different process technology will also influence the value for minimum supplied voltage used and temperature range that the SRAM circuit can operate properly. The process technology of hpl4tb has the minimum voltage supply of0.83 Vat 5 MHz while amil6 has the widest effective range temperature from -229°C to 224°C at IOOMHz and 1.3 V simulation. iv Universiti Teknologi Petronas 2011-05 Final Year Project NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/8318/1/2011%20-%20Performance%20study%20of%201%20bit%20static%20Ram%20based%20on%20process%20technologies.pdf MD TUMIRAN, NADIAH (2011) PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES. Universiti Teknologi Petronas. (Unpublished)
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Electronic and Digitized Intellectual Asset
url_provider http://utpedia.utp.edu.my/
language English
topic TJ Mechanical engineering and machinery
spellingShingle TJ Mechanical engineering and machinery
MD TUMIRAN, NADIAH
PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES
description A basic memory cell of Static Random Access Memory (SRAM) topology consists of four transistors which act as a flip flop and two more transistors will act as pass transistor. In this study, experiment is done by varying the values of different variables that can affect the performance of basic memory cell. Among the variables are magnitudes of voltage supply, temperature, clock frequency and process technology to be used in fabrication of memory cell. These variables will have their own limit due to the configuration of circuit and properties transistor parameters in the memory cell. These values will determine the performance of the memory cell. The studies are carried out using various process technologies by simulation at schematic level. The results show that higher clock frequency will require higher value of supplied voltage. Lower supplied voltage will make SRAM failed to operate at high temperature. Different process technology will also influence the value for minimum supplied voltage used and temperature range that the SRAM circuit can operate properly. The process technology of hpl4tb has the minimum voltage supply of0.83 Vat 5 MHz while amil6 has the widest effective range temperature from -229°C to 224°C at IOOMHz and 1.3 V simulation. iv
format Final Year Project
author MD TUMIRAN, NADIAH
author_facet MD TUMIRAN, NADIAH
author_sort MD TUMIRAN, NADIAH
title PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES
title_short PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES
title_full PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES
title_fullStr PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES
title_full_unstemmed PERFORMANCE STUDY OF 1 BIT STATIC RAM BASED ON PROCESS TECHNOLOGIES
title_sort performance study of 1 bit static ram based on process technologies
publisher Universiti Teknologi Petronas
publishDate 2011
url http://utpedia.utp.edu.my/8318/1/2011%20-%20Performance%20study%20of%201%20bit%20static%20Ram%20based%20on%20process%20technologies.pdf
http://utpedia.utp.edu.my/8318/
_version_ 1739831561947185152
score 13.222552

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