DESIGN, FABRICATION AND CHARACTERIZATION OF A CMOS-MEMS MASS-SENSITIVE RELATIVE HUMIDITY SENSOR
This research presents the design of CMOS-MEMS device with embedded microheater operating at relatively elevated temperatures (40°C to 150°C) for the purpose of relative humidity measurement. It is designed, simulated, fabricated and characterized to resolve the problem of reversibility and stabi...
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis |
| Language: | English |
| Published: |
2015
|
| Subjects: | |
| Online Access: | http://utpedia.utp.edu.my/21542/1/2015%20-ELECTRICAL%20%26%20ELECTRONIC%20-%20DESIGN%2C%20FABRICATION%20%26%20CHARACTERIZATION%20OF%20CMOS-MEMS%20MASS-SENSITIVE%20RELATIVE%20HUMIDITY%20SENSOR%20-%20ABDELAZIZ%20YOUSIF%20AHMED%20ALMAHI.pdf http://utpedia.utp.edu.my/21542/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| id |
my-utp-utpedia.21542 |
|---|---|
| record_format |
eprints |
| spelling |
my-utp-utpedia.215422021-09-22T21:01:41Z http://utpedia.utp.edu.my/21542/ DESIGN, FABRICATION AND CHARACTERIZATION OF A CMOS-MEMS MASS-SENSITIVE RELATIVE HUMIDITY SENSOR AHMED ALMAHI, ABDELAZIZ YOUSIF TK Electrical engineering. Electronics Nuclear engineering This research presents the design of CMOS-MEMS device with embedded microheater operating at relatively elevated temperatures (40°C to 150°C) for the purpose of relative humidity measurement. It is designed, simulated, fabricated and characterized to resolve the problem of reversibility and stability. The sensing principle is based on the change in amplitude of the CMOS-MEMS device due to adsorption/absorption or desorption of humidity on the active material layer of titanium dioxide (Ti02) deposited on the moving plate that results in changes in the mass of the device. The CMOS-MEMS device is operated in the dynamic mode using electrothermal actuation by applying an AC current through the embedded microheater to produce vibrations. These vibrations induce stress at the anchor points of the supporting beams resulting in change of the resistance of the piezoresistors (PZR) which can be measured using a Wheatstone bridge arrangement. 2015-05 Thesis NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/21542/1/2015%20-ELECTRICAL%20%26%20ELECTRONIC%20-%20DESIGN%2C%20FABRICATION%20%26%20CHARACTERIZATION%20OF%20CMOS-MEMS%20MASS-SENSITIVE%20RELATIVE%20HUMIDITY%20SENSOR%20-%20ABDELAZIZ%20YOUSIF%20AHMED%20ALMAHI.pdf AHMED ALMAHI, ABDELAZIZ YOUSIF (2015) DESIGN, FABRICATION AND CHARACTERIZATION OF A CMOS-MEMS MASS-SENSITIVE RELATIVE HUMIDITY SENSOR. PhD thesis, Universiti Teknologi PETRONAS. |
| institution |
Universiti Teknologi Petronas |
| building |
UTP Resource Centre |
| collection |
Institutional Repository |
| continent |
Asia |
| country |
Malaysia |
| content_provider |
Universiti Teknologi Petronas |
| content_source |
UTP Electronic and Digitized Intellectual Asset |
| url_provider |
http://utpedia.utp.edu.my/ |
| language |
English |
| topic |
TK Electrical engineering. Electronics Nuclear engineering |
| spellingShingle |
TK Electrical engineering. Electronics Nuclear engineering AHMED ALMAHI, ABDELAZIZ YOUSIF DESIGN, FABRICATION AND CHARACTERIZATION OF A CMOS-MEMS MASS-SENSITIVE RELATIVE HUMIDITY SENSOR |
| description |
This research presents the design of CMOS-MEMS device with embedded
microheater operating at relatively elevated temperatures (40°C to 150°C) for the
purpose of relative humidity measurement. It is designed, simulated, fabricated and
characterized to resolve the problem of reversibility and stability. The sensing
principle is based on the change in amplitude of the CMOS-MEMS device due to
adsorption/absorption or desorption of humidity on the active material layer of
titanium dioxide (Ti02) deposited on the moving plate that results in changes in the
mass of the device. The CMOS-MEMS device is operated in the dynamic mode using
electrothermal actuation by applying an AC current through the embedded
microheater to produce vibrations. These vibrations induce stress at the anchor points
of the supporting beams resulting in change of the resistance of the piezoresistors
(PZR) which can be measured using a Wheatstone bridge arrangement. |
| format |
Thesis |
| author |
AHMED ALMAHI, ABDELAZIZ YOUSIF |
| author_facet |
AHMED ALMAHI, ABDELAZIZ YOUSIF |
| author_sort |
AHMED ALMAHI, ABDELAZIZ YOUSIF |
| title |
DESIGN, FABRICATION AND CHARACTERIZATION OF A CMOS-MEMS
MASS-SENSITIVE RELATIVE HUMIDITY SENSOR |
| title_short |
DESIGN, FABRICATION AND CHARACTERIZATION OF A CMOS-MEMS
MASS-SENSITIVE RELATIVE HUMIDITY SENSOR |
| title_full |
DESIGN, FABRICATION AND CHARACTERIZATION OF A CMOS-MEMS
MASS-SENSITIVE RELATIVE HUMIDITY SENSOR |
| title_fullStr |
DESIGN, FABRICATION AND CHARACTERIZATION OF A CMOS-MEMS
MASS-SENSITIVE RELATIVE HUMIDITY SENSOR |
| title_full_unstemmed |
DESIGN, FABRICATION AND CHARACTERIZATION OF A CMOS-MEMS
MASS-SENSITIVE RELATIVE HUMIDITY SENSOR |
| title_sort |
design, fabrication and characterization of a cmos-mems
mass-sensitive relative humidity sensor |
| publishDate |
2015 |
| url |
http://utpedia.utp.edu.my/21542/1/2015%20-ELECTRICAL%20%26%20ELECTRONIC%20-%20DESIGN%2C%20FABRICATION%20%26%20CHARACTERIZATION%20OF%20CMOS-MEMS%20MASS-SENSITIVE%20RELATIVE%20HUMIDITY%20SENSOR%20-%20ABDELAZIZ%20YOUSIF%20AHMED%20ALMAHI.pdf http://utpedia.utp.edu.my/21542/ |
| _version_ |
1739832881612587008 |
| score |
13.211869 |