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Patterning Monolayer Graphene Using Plasma Etcher For Transparent Conducting Electrode Applications

High electrical conductivity and high optical transparency characteristics of Transparent Conducting Electrode (TCE), have made graphene widely used in numerous optoelectronics device. Historically, Indium Tin Oxide (ITO), is the leading material in TCE Industry. However, due to the lack of material...

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Main Author: Noor Azman, Nur Allia Ellysa
Format: Final Year Project
Language:English
Published: IRC 2016
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://utpedia.utp.edu.my/17209/1/Final%20Dissertation%20Allia.pdf
http://utpedia.utp.edu.my/17209/
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spelling my-utp-utpedia.172092017-03-01T16:27:45Z http://utpedia.utp.edu.my/17209/ Patterning Monolayer Graphene Using Plasma Etcher For Transparent Conducting Electrode Applications Noor Azman, Nur Allia Ellysa TK Electrical engineering. Electronics Nuclear engineering High electrical conductivity and high optical transparency characteristics of Transparent Conducting Electrode (TCE), have made graphene widely used in numerous optoelectronics device. Historically, Indium Tin Oxide (ITO), is the leading material in TCE Industry. However, due to the lack of materials and high cost of production, another alternative is greatly needed which lead to the founding of graphene. Graphene has high electrical conductivity. However, it is still a challenge for the researcher in producing single layer graphene with high accuracy and high resolution due to the temperature requirement during the etching process. Therefore, a new technique of patterning monolayer graphene using oxygen plasma etcher is approached. The plasma etching process were optimized producing to 50 micronmeter resolution with 10% error and the accuracy and quality of graphene were assessed using Optical Microscope and Raman Spectroscopy. This technique essentially deals with patterning graphene using positive photoresist as blocking layer by photolithography process and another blocking layer which is aluminium was used by lift off process. Then the unexposed graphene was removed by oxygen plasma process. IRC 2016-05 Final Year Project NonPeerReviewed application/pdf en http://utpedia.utp.edu.my/17209/1/Final%20Dissertation%20Allia.pdf Noor Azman, Nur Allia Ellysa (2016) Patterning Monolayer Graphene Using Plasma Etcher For Transparent Conducting Electrode Applications. IRC, Universiti Teknologi PETRONAS. (Submitted)
institution Universiti Teknologi Petronas
building UTP Resource Centre
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Petronas
content_source UTP Electronic and Digitized Intellectual Asset
url_provider http://utpedia.utp.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Noor Azman, Nur Allia Ellysa
Patterning Monolayer Graphene Using Plasma Etcher For Transparent Conducting Electrode Applications
description High electrical conductivity and high optical transparency characteristics of Transparent Conducting Electrode (TCE), have made graphene widely used in numerous optoelectronics device. Historically, Indium Tin Oxide (ITO), is the leading material in TCE Industry. However, due to the lack of materials and high cost of production, another alternative is greatly needed which lead to the founding of graphene. Graphene has high electrical conductivity. However, it is still a challenge for the researcher in producing single layer graphene with high accuracy and high resolution due to the temperature requirement during the etching process. Therefore, a new technique of patterning monolayer graphene using oxygen plasma etcher is approached. The plasma etching process were optimized producing to 50 micronmeter resolution with 10% error and the accuracy and quality of graphene were assessed using Optical Microscope and Raman Spectroscopy. This technique essentially deals with patterning graphene using positive photoresist as blocking layer by photolithography process and another blocking layer which is aluminium was used by lift off process. Then the unexposed graphene was removed by oxygen plasma process.
format Final Year Project
author Noor Azman, Nur Allia Ellysa
author_facet Noor Azman, Nur Allia Ellysa
author_sort Noor Azman, Nur Allia Ellysa
title Patterning Monolayer Graphene Using Plasma Etcher For Transparent Conducting Electrode Applications
title_short Patterning Monolayer Graphene Using Plasma Etcher For Transparent Conducting Electrode Applications
title_full Patterning Monolayer Graphene Using Plasma Etcher For Transparent Conducting Electrode Applications
title_fullStr Patterning Monolayer Graphene Using Plasma Etcher For Transparent Conducting Electrode Applications
title_full_unstemmed Patterning Monolayer Graphene Using Plasma Etcher For Transparent Conducting Electrode Applications
title_sort patterning monolayer graphene using plasma etcher for transparent conducting electrode applications
publisher IRC
publishDate 2016
url http://utpedia.utp.edu.my/17209/1/Final%20Dissertation%20Allia.pdf
http://utpedia.utp.edu.my/17209/
_version_ 1739832356344168448
score 13.211869

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