Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature

The electronic band structure, density of states (DOS) and carrier concentration of a (13,13) metallic and a (13,0) semiconducting Single Wall Carbon Nanotube (SWCNT) have been estimated and simulated by using the Fermi-Dirac distribution function. The energy dispersion E(k) relation for metallic SW...

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Main Authors: J. Karamdel,, M. Damghanian,, F. Razaghian,, C.F. Dee,, B. Yeop Majlis,
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2010
Online Access:http://journalarticle.ukm.my/7380/1/01_Md_Yeaminhossain.pdf
http://journalarticle.ukm.my/7380/
http://www.ukm.my/jsm/english_journals/vol39num4_2010/contentsVol39num4_2010.html
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spelling my-ukm.journal.73802016-12-14T06:43:54Z http://journalarticle.ukm.my/7380/ Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature J. Karamdel, M. Damghanian, F. Razaghian, C.F. Dee, B. Yeop Majlis, The electronic band structure, density of states (DOS) and carrier concentration of a (13,13) metallic and a (13,0) semiconducting Single Wall Carbon Nanotube (SWCNT) have been estimated and simulated by using the Fermi-Dirac distribution function. The energy dispersion E(k) relation for metallic SWCNT near the minimum energy is linear and the Fermi level was independent of temperature (T). On the other hand for semiconducting SWCNT the E(k) relation is parabolic. The normalized Fermi-Energy (EF – EC) in the nondegenerate regime is a weak (logarithmic) function of carrier concentration and varies linearly with T. In the degenerate condition, the Fermi level was independent of T and was a strong function of carrier concentration. Universiti Kebangsaan Malaysia 2010-08 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/7380/1/01_Md_Yeaminhossain.pdf J. Karamdel, and M. Damghanian, and F. Razaghian, and C.F. Dee, and B. Yeop Majlis, (2010) Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature. Sains Malaysiana, 39 (4). pp. 615-620. ISSN 0126-6039 http://www.ukm.my/jsm/english_journals/vol39num4_2010/contentsVol39num4_2010.html
institution Universiti Kebangsaan Malaysia
building Perpustakaan Tun Sri Lanang Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Kebangsaan Malaysia
content_source UKM Journal Article Repository
url_provider http://journalarticle.ukm.my/
language English
description The electronic band structure, density of states (DOS) and carrier concentration of a (13,13) metallic and a (13,0) semiconducting Single Wall Carbon Nanotube (SWCNT) have been estimated and simulated by using the Fermi-Dirac distribution function. The energy dispersion E(k) relation for metallic SWCNT near the minimum energy is linear and the Fermi level was independent of temperature (T). On the other hand for semiconducting SWCNT the E(k) relation is parabolic. The normalized Fermi-Energy (EF – EC) in the nondegenerate regime is a weak (logarithmic) function of carrier concentration and varies linearly with T. In the degenerate condition, the Fermi level was independent of T and was a strong function of carrier concentration.
format Article
author J. Karamdel,
M. Damghanian,
F. Razaghian,
C.F. Dee,
B. Yeop Majlis,
spellingShingle J. Karamdel,
M. Damghanian,
F. Razaghian,
C.F. Dee,
B. Yeop Majlis,
Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
author_facet J. Karamdel,
M. Damghanian,
F. Razaghian,
C.F. Dee,
B. Yeop Majlis,
author_sort J. Karamdel,
title Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
title_short Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
title_full Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
title_fullStr Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
title_full_unstemmed Dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
title_sort dependence of band structure and carrier concentration of metallic (13, 13) and semiconducting (13, 0) single wall carbon nanotube on temperature
publisher Universiti Kebangsaan Malaysia
publishDate 2010
url http://journalarticle.ukm.my/7380/1/01_Md_Yeaminhossain.pdf
http://journalarticle.ukm.my/7380/
http://www.ukm.my/jsm/english_journals/vol39num4_2010/contentsVol39num4_2010.html
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score 13.211869