Gateless-FET pH sensor fabricated on undoped AlGaN/GaN HEMT structure HEMT structure
Gallium nitride with wurtzite crystal structure is a chemically stable semiconductor with high internal spontaneous and piezoelectric polarization, which make it highly suitable materials to create very sensitive and robust sensors for the detection of ions, gases and liquids. Sensing characteristic...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universiti Kebangsaan Malaysia
2011
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| Online Access: | http://journalarticle.ukm.my/708/1/12_Maneea.pdf http://journalarticle.ukm.my/708/ http://www.ukm.my/jsm |
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