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Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique

The effects of rf power on the structural properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited using layer-by-layer (LbL) deposition technique in a home-built plasma enhanced chemical vapor deposition (PECVD) system were investigated. The properties of the films were cha...

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Main Authors: Goh, Boon Tong, Muhamad Rasat Muhamad,, Saadah Abdul Rahman,
Format: Article
Language:English
Published: Universiti Kebangsaan Malaysia 2012
Online Access:http://journalarticle.ukm.my/5420/1/08%2520Goh%2520Boon.pdf
http://journalarticle.ukm.my/5420/
http://www.ukm.my/jsm/
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spelling my-ukm.journal.54202016-12-14T06:38:24Z http://journalarticle.ukm.my/5420/ Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique Goh, Boon Tong Muhamad Rasat Muhamad, Saadah Abdul Rahman, The effects of rf power on the structural properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited using layer-by-layer (LbL) deposition technique in a home-built plasma enhanced chemical vapor deposition (PECVD) system were investigated. The properties of the films were characterized by X-ray diffraction (XRD), micro-Raman scattering spectroscopy, high resolution transmission electron microscope (HRTEM) and Fourier transform infrared (FTIR) spectroscopy. The results showed that the films consisted of different size of Si crystallites embedded within an amorphous matrix and the growth of these crystallites was suppressed at higher rf powers. The crystalline volume fraction of the films was optimum at the rf power of 60 W and contained both small and big crystallites with diameters of 3.7 nm and 120 nm, respectively. The hydrogen content increased with increasing rf power and enhanced the structural disorder of the amorphous matrix thus decreasing the crystalline volume fraction of the films. Correlation of crystalline volume fraction, hydrogen content and structure disorder of the films under the effect of rf power is discussed. Universiti Kebangsaan Malaysia 2012-08 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/5420/1/08%2520Goh%2520Boon.pdf Goh, Boon Tong and Muhamad Rasat Muhamad, and Saadah Abdul Rahman, (2012) Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique. Sains Malaysiana, 41 (8). pp. 993-1000. ISSN 0126-6039 http://www.ukm.my/jsm/
institution Universiti Kebangsaan Malaysia
building Perpustakaan Tun Sri Lanang Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Kebangsaan Malaysia
content_source UKM Journal Article Repository
url_provider http://journalarticle.ukm.my/
language English
description The effects of rf power on the structural properties of hydrogenated nanocrystalline silicon (nc-Si:H) thin films deposited using layer-by-layer (LbL) deposition technique in a home-built plasma enhanced chemical vapor deposition (PECVD) system were investigated. The properties of the films were characterized by X-ray diffraction (XRD), micro-Raman scattering spectroscopy, high resolution transmission electron microscope (HRTEM) and Fourier transform infrared (FTIR) spectroscopy. The results showed that the films consisted of different size of Si crystallites embedded within an amorphous matrix and the growth of these crystallites was suppressed at higher rf powers. The crystalline volume fraction of the films was optimum at the rf power of 60 W and contained both small and big crystallites with diameters of 3.7 nm and 120 nm, respectively. The hydrogen content increased with increasing rf power and enhanced the structural disorder of the amorphous matrix thus decreasing the crystalline volume fraction of the films. Correlation of crystalline volume fraction, hydrogen content and structure disorder of the films under the effect of rf power is discussed.
format Article
author Goh, Boon Tong
Muhamad Rasat Muhamad,
Saadah Abdul Rahman,
spellingShingle Goh, Boon Tong
Muhamad Rasat Muhamad,
Saadah Abdul Rahman,
Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
author_facet Goh, Boon Tong
Muhamad Rasat Muhamad,
Saadah Abdul Rahman,
author_sort Goh, Boon Tong
title Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
title_short Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
title_full Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
title_fullStr Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
title_full_unstemmed Effects of rf power on structural properties of Nc-Si:H thin films deposited by layer-by-layer (LbL) deposition technique
title_sort effects of rf power on structural properties of nc-si:h thin films deposited by layer-by-layer (lbl) deposition technique
publisher Universiti Kebangsaan Malaysia
publishDate 2012
url http://journalarticle.ukm.my/5420/1/08%2520Goh%2520Boon.pdf
http://journalarticle.ukm.my/5420/
http://www.ukm.my/jsm/
_version_ 1643736408233345024
score 13.211869

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