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3D Free-standing graphene: influence of etching solution and etching time on chemical vapor deposition on the graphene/nickel foam

Three-dimensional (3D) structures made of graphene sheets have been developed recently, and have resulted in the development of a new class of graphene materials known as 3D graphene materials. High-quality free-standing 3D graphene foam has been synthesized by chemical vapor deposition (CVD) on nic...

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Main Authors: Nurul Nabila Rosma,, Rozan Mohamad Yunus,, Nur Rabiatul Adawiyah Mohd Shah,, Khuzaimah Arifin,, Lorna Jeffery Minggu,, Norasikin Ahmad Ludin,
Format: Article
Language:English
Published: Penerbit Universiti Kebangsaan Malaysia 2023
Online Access:http://journalarticle.ukm.my/21976/1/kjt_22.pdf
http://journalarticle.ukm.my/21976/
https://www.ukm.my/jkukm/volume-3501-2023/
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spelling my-ukm.journal.219762023-07-27T06:30:17Z http://journalarticle.ukm.my/21976/ 3D Free-standing graphene: influence of etching solution and etching time on chemical vapor deposition on the graphene/nickel foam Nurul Nabila Rosma, Rozan Mohamad Yunus, Nur Rabiatul Adawiyah Mohd Shah, Khuzaimah Arifin, Lorna Jeffery Minggu, Norasikin Ahmad Ludin, Three-dimensional (3D) structures made of graphene sheets have been developed recently, and have resulted in the development of a new class of graphene materials known as 3D graphene materials. High-quality free-standing 3D graphene foam has been synthesized by chemical vapor deposition (CVD) on nickel foam followed by a chemical etching process to remove the nickel foam as a template. Field-emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), and Raman spectroscopy measurements were performed to investigate the morphologies, crystal phase, and the structure of nickel foam (NF), graphene/nickel foam (Gr/NF), and 3D graphene (3D Gr). In this study, the influence of etching solution and etching time on Gr/NF to produce free-standing 3D Gr was investigated. XRD spectroscopy showed that the mixed solutions of 1M FeCl3:1M HCl at 80 °C for 3 h can significantly remove the NF and no peaks of NF are observed, thus indicating a high crystal quality of 3D Gr was obtained. In addition, XRD spectroscopy revealed that by increasing the etching time beyond 3 h, the intensity of diffraction peaks decreases, thus degrading graphene quality. This research emphasizes the significance of proper selections of etching solution and etching time in removing the NF to maintain the characteristic, quality, and surface morphology of 3D Gr after the etching process. Penerbit Universiti Kebangsaan Malaysia 2023 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/21976/1/kjt_22.pdf Nurul Nabila Rosma, and Rozan Mohamad Yunus, and Nur Rabiatul Adawiyah Mohd Shah, and Khuzaimah Arifin, and Lorna Jeffery Minggu, and Norasikin Ahmad Ludin, (2023) 3D Free-standing graphene: influence of etching solution and etching time on chemical vapor deposition on the graphene/nickel foam. Jurnal Kejuruteraan, 35 (1). pp. 231-236. ISSN 0128-0198 https://www.ukm.my/jkukm/volume-3501-2023/
institution Universiti Kebangsaan Malaysia
building Tun Sri Lanang Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Kebangsaan Malaysia
content_source UKM Journal Article Repository
url_provider http://journalarticle.ukm.my/
language English
description Three-dimensional (3D) structures made of graphene sheets have been developed recently, and have resulted in the development of a new class of graphene materials known as 3D graphene materials. High-quality free-standing 3D graphene foam has been synthesized by chemical vapor deposition (CVD) on nickel foam followed by a chemical etching process to remove the nickel foam as a template. Field-emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), and Raman spectroscopy measurements were performed to investigate the morphologies, crystal phase, and the structure of nickel foam (NF), graphene/nickel foam (Gr/NF), and 3D graphene (3D Gr). In this study, the influence of etching solution and etching time on Gr/NF to produce free-standing 3D Gr was investigated. XRD spectroscopy showed that the mixed solutions of 1M FeCl3:1M HCl at 80 °C for 3 h can significantly remove the NF and no peaks of NF are observed, thus indicating a high crystal quality of 3D Gr was obtained. In addition, XRD spectroscopy revealed that by increasing the etching time beyond 3 h, the intensity of diffraction peaks decreases, thus degrading graphene quality. This research emphasizes the significance of proper selections of etching solution and etching time in removing the NF to maintain the characteristic, quality, and surface morphology of 3D Gr after the etching process.
format Article
author Nurul Nabila Rosma,
Rozan Mohamad Yunus,
Nur Rabiatul Adawiyah Mohd Shah,
Khuzaimah Arifin,
Lorna Jeffery Minggu,
Norasikin Ahmad Ludin,
spellingShingle Nurul Nabila Rosma,
Rozan Mohamad Yunus,
Nur Rabiatul Adawiyah Mohd Shah,
Khuzaimah Arifin,
Lorna Jeffery Minggu,
Norasikin Ahmad Ludin,
3D Free-standing graphene: influence of etching solution and etching time on chemical vapor deposition on the graphene/nickel foam
author_facet Nurul Nabila Rosma,
Rozan Mohamad Yunus,
Nur Rabiatul Adawiyah Mohd Shah,
Khuzaimah Arifin,
Lorna Jeffery Minggu,
Norasikin Ahmad Ludin,
author_sort Nurul Nabila Rosma,
title 3D Free-standing graphene: influence of etching solution and etching time on chemical vapor deposition on the graphene/nickel foam
title_short 3D Free-standing graphene: influence of etching solution and etching time on chemical vapor deposition on the graphene/nickel foam
title_full 3D Free-standing graphene: influence of etching solution and etching time on chemical vapor deposition on the graphene/nickel foam
title_fullStr 3D Free-standing graphene: influence of etching solution and etching time on chemical vapor deposition on the graphene/nickel foam
title_full_unstemmed 3D Free-standing graphene: influence of etching solution and etching time on chemical vapor deposition on the graphene/nickel foam
title_sort 3d free-standing graphene: influence of etching solution and etching time on chemical vapor deposition on the graphene/nickel foam
publisher Penerbit Universiti Kebangsaan Malaysia
publishDate 2023
url http://journalarticle.ukm.my/21976/1/kjt_22.pdf
http://journalarticle.ukm.my/21976/
https://www.ukm.my/jkukm/volume-3501-2023/
_version_ 1772812469585051648
score 13.211869

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