Staff View: Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell

Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell

In this study, the indium gallium nitride (InxGa1-xN) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The InxGa1-xN p-n junction solar cells with the whole indium mole fraction (0 ≤ x ≤ 1) were simulated using SCAPS-1D software. Optimization of the p- and n-InxG...

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Main Authors:	Manzoor, Habib Ullah, Tan, Aik Kwan, Ng, Sha Shiong, Zainuriah Hassan,
Format:	Article
Language:	English
Published:	Penerbit Universiti Kebangsaan Malaysia 2022
Online Access:	http://journalarticle.ukm.my/19488/1/24.pdf http://journalarticle.ukm.my/19488/ https://www.ukm.my/jsm/malay_journals/jilid51bil5_2022/KandunganJilid51Bil5_2022.html
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id	my-ukm.journal.19488
record_format	eprints
spelling	my-ukm.journal.194882022-08-26T02:34:33Z http://journalarticle.ukm.my/19488/ Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell Manzoor, Habib Ullah Tan, Aik Kwan Ng, Sha Shiong Zainuriah Hassan, In this study, the indium gallium nitride (InxGa1-xN) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The InxGa1-xN p-n junction solar cells with the whole indium mole fraction (0 ≤ x ≤ 1) were simulated using SCAPS-1D software. Optimization of the p- and n-InxGa1-xN layer’s thickness and carrier density were also carried out. The thickness and carrier density of each layer was varied from 0.01 to 1.50 μm and 1015 to 1020 cm-3. The simulation results showed that the highest conversion efficiency of 23.11% was achieved with x = 0.6. The thickness (carrier density) of the p- and n-layers for this In0.6Ga0.4N p-n junction solar cell are 0.01 (1020) and 1.50 μm (1019 cm-3), respectively. Simulation results also showed that the conversion efficiency is more sensitive to the variations of layer’s thickness and carrier density of the top p-InxGa1-xN layer than the bottom n-InxGa1-xN layer. Besides that, the results also demonstrated that thinner p-InxGa1-xN layer with higher carrier density offers better conversion efficiency. Penerbit Universiti Kebangsaan Malaysia 2022-05 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/19488/1/24.pdf Manzoor, Habib Ullah and Tan, Aik Kwan and Ng, Sha Shiong and Zainuriah Hassan, (2022) Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell. Sains Malaysiana, 51 (5). pp. 1567-1576. ISSN 0126-6039 https://www.ukm.my/jsm/malay_journals/jilid51bil5_2022/KandunganJilid51Bil5_2022.html
institution	Universiti Kebangsaan Malaysia
building	Tun Sri Lanang Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Kebangsaan Malaysia
content_source	UKM Journal Article Repository
url_provider	http://journalarticle.ukm.my/
language	English
description	In this study, the indium gallium nitride (InxGa1-xN) p-n junction solar cells were optimized to achieve the highest conversion efficiency. The InxGa1-xN p-n junction solar cells with the whole indium mole fraction (0 ≤ x ≤ 1) were simulated using SCAPS-1D software. Optimization of the p- and n-InxGa1-xN layer’s thickness and carrier density were also carried out. The thickness and carrier density of each layer was varied from 0.01 to 1.50 μm and 1015 to 1020 cm-3. The simulation results showed that the highest conversion efficiency of 23.11% was achieved with x = 0.6. The thickness (carrier density) of the p- and n-layers for this In0.6Ga0.4N p-n junction solar cell are 0.01 (1020) and 1.50 μm (1019 cm-3), respectively. Simulation results also showed that the conversion efficiency is more sensitive to the variations of layer’s thickness and carrier density of the top p-InxGa1-xN layer than the bottom n-InxGa1-xN layer. Besides that, the results also demonstrated that thinner p-InxGa1-xN layer with higher carrier density offers better conversion efficiency.
format	Article
author	Manzoor, Habib Ullah Tan, Aik Kwan Ng, Sha Shiong Zainuriah Hassan,
spellingShingle	Manzoor, Habib Ullah Tan, Aik Kwan Ng, Sha Shiong Zainuriah Hassan, Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell
author_facet	Manzoor, Habib Ullah Tan, Aik Kwan Ng, Sha Shiong Zainuriah Hassan,
author_sort	Manzoor, Habib Ullah
title	Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell
title_short	Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell
title_full	Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell
title_fullStr	Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell
title_full_unstemmed	Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell
title_sort	carrier density and thickness optimization of inxga1-xn layer by scaps-1d simulation for high efficiency iii-v solar cell
publisher	Penerbit Universiti Kebangsaan Malaysia
publishDate	2022
url	http://journalarticle.ukm.my/19488/1/24.pdf http://journalarticle.ukm.my/19488/ https://www.ukm.my/jsm/malay_journals/jilid51bil5_2022/KandunganJilid51Bil5_2022.html
_version_	1743108007233847296
score	13.211869

Carrier density and thickness optimization of inxGa1-xN layer by scaps-1D simulation for high efficiency III-V solar cell

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