Enhanced performance of quantum dots sensitized solar cell utilizing copper indium sulfide and reduced-graphene oxide with the presence of silver sulfide
In this study, rGO/CuInS2 has been successfully prepared onto TiO2 thin film using solvothermal method followed by Ag2 S deposition layer by successive ionic layer adsorption and reaction deposition (SILAR) technique. The morphology, structural, and optical properties of TiO2 /rGO/CuInS2 t...
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| Main Authors: | , , , , , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
Penerbit Universiti Kebangsaan Malaysia
2020
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| 在線閱讀: | http://journalarticle.ukm.my/16164/1/11.pdf http://journalarticle.ukm.my/16164/ https://www.ukm.my/jsm/malay_journals/jilid49bil12_2020/KandunganJilid49Bil12_2020.html |
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| 總結: | In this study, rGO/CuInS2
has been successfully prepared onto TiO2
thin film using solvothermal method followed by
Ag2
S deposition layer by successive ionic layer adsorption and reaction deposition (SILAR) technique. The morphology,
structural, and optical properties of TiO2
/rGO/CuInS2
thin film were investigated by using field emission scanning
electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), atomic force microscope (AFM), X-ray
diffraction (XRD) and ultra-violet-visible near infrared spectrophotometer (UV-Vis). For electrical properties,
electrochemical impedance spectra (EIS) and current-voltage (I-V) test investigated the interfacial charge-transfer
resistances and the conversion efficiency of the samples. Results showed that the average particles size of the samples
ranged from ±46.52 to ±53.97 nm in diameter. UV-VIS analysis indicated that TiO2
/rGO/CuInS2
thin film showed better
light absorption capability with the presence of Ag2
S deposition layers. The rGO/CuInS2
quantum dot sensitized with
Ag2
S layers exhibit a photovoltaic power conversion efficiency of 0.33%, which has great improvement of short circuit
current (ISC) comparing with that of rGO/CuInS2
quantum dot sensitized without Ag2
S deposition layers. |
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