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Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films

Diluted magnetic semiconductors (DMSs) have always been of great interest to study due to their wide applications in spintronics. This research was carried out to study the influence of different hydrogen gas flow rates annealing on the physical properties of Fe doped indium oxide. In1.92Fe0.08O3 th...

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Main Authors: Noor Baa`yah Ibrahim,, N.F. Zulkifli,, Lau, L.N., A.Z. Arsad,, N. Yusop,
Format: Article
Language:English
Published: Penerbit Universiti Kebangsaan Malaysia 2019
Online Access:http://journalarticle.ukm.my/13070/1/24%20N.B.%20Ibrahim.pdf
http://journalarticle.ukm.my/13070/
http://www.ukm.my/jsm/malay_journals/jilid48bil1_2019/KandunganJilid48Bil1_2019.html
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spelling my-ukm.journal.130702019-06-20T14:51:33Z http://journalarticle.ukm.my/13070/ Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films Noor Baa`yah Ibrahim, N.F. Zulkifli, Lau, L.N. A.Z. Arsad, N. Yusop, Diluted magnetic semiconductors (DMSs) have always been of great interest to study due to their wide applications in spintronics. This research was carried out to study the influence of different hydrogen gas flow rates annealing on the physical properties of Fe doped indium oxide. In1.92Fe0.08O3 thin films were prepared by a sol-gel method and followed by a spin coating technique. Different flow rates of hydrogen gas were applied during the annealing process. All samples showed high orientation along the (222) direction and exhibit a polycrystalline structure. Grain size increased as the flow rate increased due to the stronger reduction of H2. FTIR studies showed the existence of an O-H bond in the range of 3000 - 4000 cm-1 and it was caused by the flow of H2 gas during the annealing process. The resistivity of In1.92Fe0.08O3 thin films decreased and the carrier concentration increased with increasing hydrogen flow rates. This work has significance on the size-dependent properties and the chemical bonding in Fe doped In2O3 films. Penerbit Universiti Kebangsaan Malaysia 2019-01 Article PeerReviewed application/pdf en http://journalarticle.ukm.my/13070/1/24%20N.B.%20Ibrahim.pdf Noor Baa`yah Ibrahim, and N.F. Zulkifli, and Lau, L.N. and A.Z. Arsad, and N. Yusop, (2019) Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films. Sains Malaysiana, 48 (1). pp. 209-216. ISSN 0126-6039 http://www.ukm.my/jsm/malay_journals/jilid48bil1_2019/KandunganJilid48Bil1_2019.html
institution Universiti Kebangsaan Malaysia
building Perpustakaan Tun Sri Lanang Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Kebangsaan Malaysia
content_source UKM Journal Article Repository
url_provider http://journalarticle.ukm.my/
language English
description Diluted magnetic semiconductors (DMSs) have always been of great interest to study due to their wide applications in spintronics. This research was carried out to study the influence of different hydrogen gas flow rates annealing on the physical properties of Fe doped indium oxide. In1.92Fe0.08O3 thin films were prepared by a sol-gel method and followed by a spin coating technique. Different flow rates of hydrogen gas were applied during the annealing process. All samples showed high orientation along the (222) direction and exhibit a polycrystalline structure. Grain size increased as the flow rate increased due to the stronger reduction of H2. FTIR studies showed the existence of an O-H bond in the range of 3000 - 4000 cm-1 and it was caused by the flow of H2 gas during the annealing process. The resistivity of In1.92Fe0.08O3 thin films decreased and the carrier concentration increased with increasing hydrogen flow rates. This work has significance on the size-dependent properties and the chemical bonding in Fe doped In2O3 films.
format Article
author Noor Baa`yah Ibrahim,
N.F. Zulkifli,
Lau, L.N.
A.Z. Arsad,
N. Yusop,
spellingShingle Noor Baa`yah Ibrahim,
N.F. Zulkifli,
Lau, L.N.
A.Z. Arsad,
N. Yusop,
Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
author_facet Noor Baa`yah Ibrahim,
N.F. Zulkifli,
Lau, L.N.
A.Z. Arsad,
N. Yusop,
author_sort Noor Baa`yah Ibrahim,
title Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
title_short Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
title_full Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
title_fullStr Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
title_full_unstemmed Influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized Fe doped In2O3 films
title_sort influence of hydrogen flow rates annealing on the structural, optical and electrical properties of sol-gel synthesized fe doped in2o3 films
publisher Penerbit Universiti Kebangsaan Malaysia
publishDate 2019
url http://journalarticle.ukm.my/13070/1/24%20N.B.%20Ibrahim.pdf
http://journalarticle.ukm.my/13070/
http://www.ukm.my/jsm/malay_journals/jilid48bil1_2019/KandunganJilid48Bil1_2019.html
_version_ 1643738970737082368
score 13.211869

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