Influence of complexing agent on the growth of chemically deposited Ni3Pb2S2 thin films
Ni 3 Pb 2 S 2 thin films were prepared by chemical bath deposition method. Here, the objective of this research is to investigate the influence of complexing agent on the properties of films.These films were characterized using atomic force microscopy, UV-Visible spectrophotometery and X-ray diff...
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Oriental Scientific Publishing
2014
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my-inti-eprints.462016-09-23T02:24:58Z http://eprints.intimal.edu.my/46/ Influence of complexing agent on the growth of chemically deposited Ni3Pb2S2 thin films Ho, Soon Min QD Chemistry Ni 3 Pb 2 S 2 thin films were prepared by chemical bath deposition method. Here, the objective of this research is to investigate the influence of complexing agent on the properties of films.These films were characterized using atomic force microscopy, UV-Visible spectrophotometery and X-ray diffraction. It was found that the increase in the concentration of tartaric acid, film thickness increased, but, the band gap reduced. For the films prepared using 0.1M of tartaric acid, were found uniform and completely covered with the substrates. Oriental Scientific Publishing 2014 Article PeerReviewed text en http://eprints.intimal.edu.my/46/1/Influence%20of%20complexing%20agent%20on%20the%20growth%20of%20chemically%20deposited%20Ni3Pb2S2%20thin%20films.pdf Ho, Soon Min (2014) Influence of complexing agent on the growth of chemically deposited Ni3Pb2S2 thin films. Oriental Journal of Chemistry, 30 (3). pp. 1009-1012. ISSN 0970-020 X http://www.orientjchem.org/ 10.13005/ojc/300311 |
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QD Chemistry Ho, Soon Min Influence of complexing agent on the growth of chemically deposited Ni3Pb2S2 thin films |
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Ni 3 Pb 2 S 2 thin films were prepared by chemical bath deposition method. Here, the objective
of this research is to investigate the influence of complexing agent on the properties of films.These
films were characterized using atomic force microscopy, UV-Visible spectrophotometery and X-ray
diffraction. It was found that the increase in the concentration of tartaric acid, film thickness increased,
but, the band gap reduced. For the films prepared using 0.1M of tartaric acid, were found uniform
and completely covered with the substrates. |
format |
Article |
author |
Ho, Soon Min |
author_facet |
Ho, Soon Min |
author_sort |
Ho, Soon Min |
title |
Influence of complexing agent on the growth of chemically deposited Ni3Pb2S2 thin films |
title_short |
Influence of complexing agent on the growth of chemically deposited Ni3Pb2S2 thin films |
title_full |
Influence of complexing agent on the growth of chemically deposited Ni3Pb2S2 thin films |
title_fullStr |
Influence of complexing agent on the growth of chemically deposited Ni3Pb2S2 thin films |
title_full_unstemmed |
Influence of complexing agent on the growth of chemically deposited Ni3Pb2S2 thin films |
title_sort |
influence of complexing agent on the growth of chemically deposited ni3pb2s2 thin films |
publisher |
Oriental Scientific Publishing |
publishDate |
2014 |
url |
http://eprints.intimal.edu.my/46/1/Influence%20of%20complexing%20agent%20on%20the%20growth%20of%20chemically%20deposited%20Ni3Pb2S2%20thin%20films.pdf http://eprints.intimal.edu.my/46/ http://www.orientjchem.org/ |
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13.211869 |